北京谱仪Ⅲ电磁量能器触发系统的模拟研究

利用北京谱仪Ⅲ探测器模拟和触发系统模拟程序,研究了北京谱仪Ⅲ电磁量能器的触发方案.根据物理目标设计了中性事例触发,巴巴事例判选和带电事例触发的方案,优化了各触发条件的参数,并仔细研究了对本底的排斥能力.研究了一批典型的物理道,给出了它们的触发效率,同时给出了预期的本底触发事例率.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

Mid-infrared generation based on a periodically poled LiNbO3 optical parametric oscillator

We report a nanosecond Nd:YVO_4-pumped optical parametric oscillator (OPO) based on periodically poled LiNbO_3 (PPLN). Tuning is achieved in this experiment by varying the temperature and period of the PPLN. The design of double-pass singly resonant oscillator (DSRO) and confocal cavity enables the OPO threshold to be lowered considerably, resulting in a simple, compact, all-solid-state configuration with the mid-infrared idler powers of up to 466mW at 3.41μm.     

溴分子[^2Π3／2]4d里德堡态的转动谱的计算模拟

对溴分子在６８８００－７２００ｃｍ＾－１范围内的两个被观察到的［＾２Π３／２］４ｄ偶宇称里堡态的转动光谱进行了计算模拟，确定了转动常数，并且证实了原先对实验光谱的传动结构和电子角动量的标识。     

飞行管理问题的实时算法

本文讨论了在一定区域空间内进行飞行管理避免飞机相撞的模型，提出了直接搜索法和非线性规划（SUMT）法两种解法，并将两种方法有机结合，得出的算法在486微机上计算时间小于10秒，误差不超过0.01度，完全符合问题的要求。本文接着给出四种不同情况分别用两种方法求解，进行比较检验，取得很好的吻合，充分说明了模型3的可靠性。本文还对模型的误差进行分析并对模型进行推广。     

Nd：YVO4晶体α向生长研究

采用固-液两相混合，使Nd2o3、Y2O3和V2O5在近常温条件下初步合成Nd：YVO4多晶原料，降低固相合成反应温度，减少V2O5在多晶原料制备过程中的挥发。讨论了α方向V单晶生长条件，采用提拉法，以(100)方向进行单晶生长，得到一系列掺杂浓度的Nd：YVO4单晶。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

二次升压的重复频率脉冲电源

介绍一种采用脉冲变压器二次升压工作方式实现高电压脉冲输出的设计电路，电路的主要特点是可以对电容负载实现快速充电，通常其充电时间可控制在几百纳秒内。由于在电路中的开关器件为氢闸流管和磁压缩装置，因此系统具有千赫兹的连续重复频率工作能力。目前，以这种方式工作的重复频率脉冲电源系统，脉冲调制过程的能量传输效率大于70％，输出脉冲电压大于600kV，连续重复频率大于100Hz.