A field-effect WSe2/Si heterojunction diode

It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional (2D) materials in silicon roadmap. In this paper, we reported a field-effect WSe₂/Si heterojunction diode based on ambipolar 2D WSe₂ and silicon on insulator (SOI). Our results indicate that the device exhibits a p-n diode behavior with a rectifying ratio of ～ 300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10¹⁰ Jones and external quantum efficiency (EQE) of 8.9 %. Due to the ambipolar behavior of the WSe₂, the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.     

从反常霍尔效应到量子反常霍尔效应

 美国物理学家霍尔 (Edwin H.Hall) 在1879 年发现,当电流垂直于外磁场通过导体时,在导体的垂直于磁场和电流方向的两个边界之间会出现电势差(图1)。这个现象被称作霍尔效应。在当时要理解这一重要的现象还非常困难,因为电子的概念在18年后才被提出来。     

Z_2拓扑不变量与拓扑绝缘体

文章回顾了几种Z2拓扑数的计算方法,并详细介绍了一种用非阿贝尔贝里联络表示绝缘体Z2不变量的计算方法.这种方法可以确定出一般能带绝缘体的拓扑性质,而不需要限定波函数的规范.利用这种新方法,文章作者计算了二维石墨烯(graphene)系统的Z2拓扑数,得到了和以前研究相一致的结论.     

磁性拓扑绝缘体中的量子化反常霍尔效应——无需外磁场的量子化霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体(Bi2Se3,Bi2Te3和Sb2Te3)薄膜中掺杂过渡金属元素(Cr或Fe)实现量子化反常霍尔效应的方法.