反胶束固定化醇脱氢酶的制备及应用研究

研究十六烷基三甲基溴化铵(CTAB)-辛烷-己醇反胶束体系固定化醇脱氢酶(ADH)的制备及应用。考察了含水量、CTAB和己醇用量对于ADH固定化的影响。对游离酶和固定化酶的催化动力学性质研究表明:酶促反应的最适pH值分别为8.2和8.8,最适温度分别为31℃和20℃,米氏常数分别为12mmol/L和7mmol/L。30℃时,游离酶存放150min后失活90%,固定化酶失活50%,表明反胶束固定化ADH有较好的热稳定性。应用此体系测定了试样中乙醇的含量。     

An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.     

求解高阶KdV方程孤子解的一种简单方法

根据Jost解必须满足相容性方程,从2n 1阶KdV方程的第一个相容性方程推导出两个等式;用这两个等式构造出Gel'fand-Levitan-Marchenko方程,在无反射条件下,求解任意高阶 KdV方程孤子解的问题归结为纯粹的代数运算,从而避开了对Jost解的解析性进行繁杂的理论分析,因此更加便于实际应用.     

One-dimensional continuous analytic potential solution to generic oxide-silicon-oxide system

A one-dimensional continuous analytic potential solution to a generic oxide--silicon--oxide system is developed. With the analytic solution, the potential distribution in the silicon film is predicted. A physics-based relation between surface potentials is also derived and then applied to the generic oxide--silicon--oxide metal--oxide--semiconductor field-effect transistors (MOSFETs) for the calculation of surface potentials     

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A novel lateral double-gate tunnelling field effect transistor （DG-TFET） is studied and its performance is presented by a two-dimensional device simulation with code ISE. The result demonstrates that this new tunnelling transistor allows for the steeper sub-threshold swing below 60mV/dec, the super low supply voltage （operable at VDD 〈 0.3 V） and the rail-to-rail logic （significant on-state current at the drain-source voltage VDS = 50mV） for the aggressive technology assumptions of the availability of high-k/metal stack with equivalent gate oxide thickness EOT =0.24 nm and the work function difference 4.5 eV of materials.     

An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

An analytical model of gate-all-around(GAA) silicon nanowire tunneling field effect transistors(NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling(BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane’s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.     

A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal–oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson–Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.     

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate (DG) MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.     

求解DNLS方程的反散射法的基本问题

对DNLS方程, 反散射法应选取k²=p为基本谱参数, 其中k为通常谱参数. 并引入一个新的谱参数及一个规范变换, 由此得到自由Jost解的规范正交系, 这就是反散射法的基本问题. 同时还得到了基于谱参数p的Marchenko方程和Zakharov-Shabat反散射方程. 关键词： DNLS方程 反散射法 自由Jost解 规范正交系     

高效毛细管电泳法测定蜂蜜中的多种糖

采用高效毛细管电泳技术,以α-萘胺为衍生剂,对蜂蜜中7种糖的衍生物进行了分离本方法的回收率为100％～105％,相对标准偏差小于2．0％本方法灵敏度高、成本低,为测定蜂蜜中的多种糖提供了一种高效快速的方法。