Local Density of States Modulated by Strain in Marginally Twisted Bilayer Graphene

In marginally twisted bilayer graphene, the Moiré pattern consists of the maximized AB(BA) stacking regions,minimized AA stacking regions and triangular networks of domain walls. Here we realize the strain-modulated electronic structures of marginally twisted bilayer graphene by scanning tunneling microscopy/spectroscopy and density functional theory(DFT) calculations. The experimental data show four peaks near the Fermi energy at the AA regions. DFT calculations indicate that the two new peaks ...     

Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition

We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS₂ monolayer on the SiO₂ substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO₃ flakes on the mica substrate compared to MoO₃ powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS₂ monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO₂ substrate and is essential to further development of the TMDs-related integrated devices.