PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.     

由Pb过量引起的镧钛酸铅铁电薄膜性能异常的研究

采用金属有机物热分解法制备了不同La含量和不同Pb过量的镧钛酸铅铁电薄膜．在研究铁电性时发现：薄膜样品在极化达到饱和之前，电滞回线会出现束腰现象，束腰现象只与薄膜中的Pb过量有关．随Pb过量的增加和La含量的减少，镧钛酸铅薄膜电滞回线的束腰程度加剧．在C-V特性测试中发现：在Pb过量的样品中，C-V曲线会出现异常的四峰现象，随偏压升高或频率增大，异常程度逐渐减弱甚至会转变成正常的双峰．进一步研究表明：这两种实验现象是统一的，可以用铁电薄膜电畴的钉扎效应解释．由于Pb过量使正常的钙钛矿薄膜中出现了多余的Pb 关键词：