Ge2Sb2Te5的化学机械抛光研究进展

相变存储器由于具有非易失性、高速度、低功耗等优点被认为最有可能成为下一代存储器的主流产品,Ge2Sb2Te5(GST)作为一种传统相变材料已经被广泛应用在相变存储器中,而GST的化学机械抛光作为相变存储器生产的关键工艺目前已被采用.本工作综述了有关GST的化学机械抛光技术研究进展,讨论了GST化学机械抛光过程的影响因素,如下压力、转速、抛光垫、磨料、氧化剂、表面活性剂等,并对目前GST的化学机械抛光机理进行了归纳,进一步展望了GST的化学机械抛光技术的发展前景.     

Thermal effect of Ge_2Sb_2Te_5 in phase change memory device

The properties of Raman phonons are very important due to the fact that they can availably reflect some important physical information. An abnormal Raman peak is observed at about 558 cm-1in In film composed of In/InOx core–shell structured nanoparticles, and the phonon mode stays very stable when the temperature changes. Our results indicate that this Raman scattering is attributed to the existence of incomplete indium oxide in the oxide shell.