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We report the temperature dependence of the spin pumping effect for Y3Fe5O12 (YIG, 0.9 μm)/NiO (tNiO)/W (6 nm) (tNiO = 0 nm, 1 nm, 2 nm, and 10 nm) heterostructures. All samples exhibit a strong temperature-dependent inverse spin Hall effect (ISHE) signal Ic and sensitivity to the NiO layer thickness. We observe a dramatic decrease of Ic with inserting thin NiO layer between YIG and W layers indicating that the inserting of NiO layer significantly suppresses the spin transport from YIG to W. In contrast to the noticeable enhancement in YIG/NiO (tNiO ≈ 1-2 nm)/Pt, the suppression of spin transport may be closely related to the specific interface-dependent spin scattering, spin memory loss, and spin conductance at the NiO/W interface. Besides, the Ic of YIG/NiO/W exhibits a maximum near the TN of the AF NiO layer because the spins are transported dominantly by incoherent thermal magnons. 相似文献
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<正>We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus (BP) using angle-resolved photoemission spectroscopy and density functional theory. The results show that there are band crossings in the Z–L (armchair) direction, 相似文献
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