双硫腙—泡沫塑料富集原子吸收光谱测定化探样品中的银

近年来,国内外对泡沫塑料分离富集微量金属元素已有很多报道。我们参照双硫腙萃取测银的条件,拟定双硫腙—泡塑富集、硫脲解脱、加热雾室火焰原子吸收光谱仪测定痕量银的分析方法,基本能满足化探分析要求。     

一维等离子体光子晶体的带隙研究

采用时域有限差分方法(FDTD),结合等离子体计算中的分段线性电流密度卷积技术(PLJERC)对一维等离子体光子晶体(1D-PPC)进行了数值模拟,给出了微分高斯脉冲在一维等离子体光子晶体中的传播过程。计算得到的带隙结构与K-P模型方法的结果一致。计算并分析了等离子体频率、介质介电常数、等离子体-介质层的厚度比以及周期厚度对一维等离子体光子晶体带隙结构的影响。     

CrN镀层的微粒磨损性能及其切削行为研究

在Teer UDP 550型闭合场非平衡磁控溅射离子镀设备上制备CrN镀层,以球-盘方法测定的比磨损率和微粒磨损法测定的微粒磨损率评价CrN镀层的耐磨性能,采用高速钢镀层钻头的钻孔数评价镀层的切削性能.结果表明,CrN镀层的微粒磨损率对氮流量(用光谱发射因子OEM值控制)的变化很敏感,而比磨损率却不能反映这种由于氮流量变化带来的镀层结构和性能的变化.在不同偏压条件下所制备的镀层微粒磨损率变化不明显.当微粒磨损率低于某一值时,CrN镀层的钻孔寿命明显提高,而比磨损率则无此规律.     

荷能离子在C60薄膜中引起的辐照效应

用 Raman散射和 XPS技术分析了能量为几百 ke V到几百 Me V的多种离子在 C60 薄膜中引起的辐照效应.分析结果表明 ,在低能重离子辐照的 C60 薄膜中 ,其晶态向非晶态的转变过程是由核碰撞主导的.在快离子 (1 2 0 ke V的 H离子和171.2 Me V的 S离子 )辐照的情况下,电子能损起主导作用.发现在H离子辐照过程中,电子能损有明显的退火效应 ,致使 C60 由晶态向非晶态转变的过程中,经历了一个石墨化的中间过程;而在 S离子辐照的情况下 ,电子能损的破坏作用超过了退火效应 ,因此 ,在C₆₀ 由晶态向非晶态转变的过程中,无石墨化的中间过程.Irradiation effecs (mainly including transformation from crystalline into amorphous state) of C 60 films induced by 120 keV H, He, N, Ar, Fe and Mo ions, 240 keV and 360 keV Ar ions, and 171.2 MeV, 125.3 MeV and 75.8 MeV S ions were analysed by means of Raman scattering and XPS technique. The analysis results indicate that amorphization process in the cases of N, Ar, Fe and Mo ions irradiation is dominated by nuclear collision, but in the case of H ion irradiation, the process is...     

用重离子实验数据推算质子翻转截面和轨道翻转率

空间单粒子辐射环境主要由重离子和高能质子构成,但在地面利用两种离子评估器件单粒子效应敏感度成本太高,因此利用重离子实验数据推算质子敏感参数成为一个非常活跃的研究课题.利用Barak经验公式,在重离子实验获得器件的σ LET值曲线的基础上,计算了几种典型器件在不同能量下的质子翻转截面以及典型轨道上质子引起的翻转率,并同FOM方法预示的质子翻转率进行了比较,其结果将对卫星电子系统抗辐射加固设计具有重要参考价值. The radiation environments concerned with single event upset mainly consist of heavy ions from cosmic ray and large flux proton from solar events and planetary radiation belts. The most reliable calculation for SEE rate induced by proton and henvy ions are the way to use the experimentally measured data rospectively. But it is too expensive to test devices with both heavy ions and protons. So it is necessary to derive models for predicting proton cross sections and rates from heavy ion test data....     

柔性有机场效应晶体管研究进展

柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域. 关键词： 柔性 晶体管 有机/聚合物 溶液加工     

Raman spectrum study of graphite irradiated by swift heavy ions

Highly oriented pyrolytic graphites are irradiated with 40.5-Me V and 67.7-Me V ^112Sn-ions in a wide range of fluences： 1×10^11 ions/cm^2–1×10^14ions/cm^2. Raman spectra in the region between 1200 cm^-1 and 3500cm^-1 show that the disorder induced by Sn-ions increases with ion fluence increasing. However, for the same fluence, the amount of disorder is greater for 40.5-Me V Sn-ions than that observed for 67.7-Me V Sn-ions, even though the latter has a slightly higher value for electronic energy loss. This is explained by the ion velocity effect. Importantly, ～ 3-cm^-1frequency shift toward lower wavenumber for the D band and ～ 6-cm^-1 shift toward lower wavenumber for the 2D band are observed at a fluence of 1×10^14 ions/cm^2, which is consistent with the scenario of radiation-induced strain. The strain formation is interpreted in the context of inelastic thermal spike model, and the change of the 2D band shape at high ion fluence is explained by the accumulation of stacking faults of the graphene layers activated by radiation-induced strain around ion tracks. Moreover,the hexagonal structure around the ion tracks is observed by scanning tunneling microscopy, which confirms that the strains near the ion tracks locally cause electronic decoupling of neighboring graphene layers.     

2,7-二硝基-9,9-二辛基芴的合成工艺改进

以芴(1)为原料,浓硝酸/浓硫酸为硝化剂,合成了2,7-二硝基-9,9-二辛基芴,其结构经1H NMR和IR确证。最佳反应条件为:1 20 mmol,n(1):n(HNO3)=1:18,c(H2SO4)=15.3 mol.L-1,于10℃反应7 h,收率56%。     

Electrical Characteristics of Copper Phthalocyanine Thin-Film Transistors with Polyamide-6/Polytetrafluoroethylene Gate Insulator

Polyamide-6（PA 6）/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.     

LYVE-1 在甲状腺乳头状癌的表达和意义

目的 观察淋巴管透明质酸受体1（LYVE-1）的表达和癌周组织中淋巴管的生成情况在甲状腺恶性肿瘤的变化及转 移中的作用。方法 应用免疫组织化学和real-time PCR方法检测45 例甲状腺乳头状癌中央区、癌周边区和正常甲状腺组织中的LYVE-1及其mRNA 表达情况,并计算淋巴管密度（LVD）。结果 甲状腺乳头状癌周边区LVD 高于甲状腺乳头状癌中央区,而正常组织中很少见LYVE-1 阳性的微淋巴管;甲状腺乳头状癌周边区LVD 与淋巴结转移有密切关系（P＜0.05）。结论 LYVE-1是一种特异性较高的淋巴管内皮特异性标志物,对淋巴管生成促进甲状腺乳头状癌的淋巴结转移。