Contrasting Transport Performance of Electron-and Hole-Doped Epitaxial Graphene for Quantum Resistance Metrology

Epitaxial graphene grown on silicon carbide(Si C/graphene) is a promising solution for achieving a highprecision quantum Hall resistance standard. Previous research mainly focused on the quantum resistance metrology of n-type Si C/graphene, while a comprehensive understanding of the quantum resistance metrology behavior of graphene with different doping types is lacking. Here, we fabricated both n-and p-type Si C/graphene devices via polymer-assisted molecular adsorption and conducted systematic...