Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers--superluminescent diodes

Extremely broadband emission is obtained from semiconductor optical amplifiers-superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In(0.67) Ga(0.33) As(0.72) P(0.28) quantum wells near the n -cladding layer and the two In(0.53) Ga(0.47) As quantum wells near the p -cladding layer, all bounded by In(0.86) Ga(0.14) As(0.3)P(0.7) barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 microm, and the FWHM could be near 300 nm.     

Measuring rank correlation coefficients between financial time series: A GARCH-copula based sequence alignment algorithm

This paper presents a novel four-stage algorithm for the measurement of the rank correlation coefficients between pairwise financial time series. In first stage returns of financial time series are fitted as skewed-t distributions by the generalized autoregressive conditional heteroscedasticity model. In the second stage, the joint probability density function (PDF) of the fitted skewed-t distributions is computed using the symmetrized Joe–Clayton copula. The joint PDF is then utilized as the scoring scheme for pairwise sequence alignment in the third stage. After solving the optimal sequence alignment problem using the dynamic programming method, we obtain the aligned pairs of the series. Finally, we compute the rank correlation coefficients of the aligned pairs in the fourth stage. To the best of our knowledge, the proposed algorithm is the first to use a sequence alignment technique to pair numerical financial time series directly, without initially transforming numerical values into symbols. Using practical financial data, the experiments illustrate the method and demonstrate the advantages of the proposed algorithm.     

An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor

A new Al_0.48In_0.52As/ Ga_0.47In_0.53As heterostructure-emitter bipolar transistor (HEBT) with a very low offset voltage of 40 mV has been fabricated by molecular beam epitaxy. From the theoretical analysis and experimental results, it is found that a 500-Å thick emitter used in the studied device can effectively eliminate the potential spike at the N–AlInAs/n–GaInAs heterointerface. However, a degenerate current gain of about 25 is obtained, attributed to the increase of recombination current at the neutral-emitter regime. This is caused by the short hole diffusion length of GaInAs, which reduces the emitter injection efficiency. Due to the small surface recombination velocity, the emitter edge-thinning design is not essential to improve the device performance of our proposed AlInAs/GaInAs HEBT.     

New Colored Visual Secret Sharing Schemes

Visual secretsharing (VSS) schemes are used to protect the visual secret bysending n transparencies to different participantsso that k-1 or fewer of them have no informationabout the original image, but the image can be seen by stackingk or more transparencies. However, the revealedsecret image of a conventional VSS scheme is just black and white.The colored k out of n VSS scheme sharinga colored image is first introduced by Verheul and Van Tilborg[1]. In this paper, a new construction for the colored VSS schemeis proposed. This scheme can be easily implemented on basis ofa black & white VSS scheme and get much better block lengththan the Verheul-Van Tilborg scheme.     

Practical sequential bounds for approximating two-terminal reliability

With increasing emphases on better and more reliable services, network systems have incorporated reliability analysis as an integral part in their planning, design and operation. This article first presents a simple exact decomposition algorithm for computing the NP-hard two-terminal reliability, which measures the probability of successful communication from specified source node to sink node in the network. Then a practical bounding algorithm, which is indispensable for large networks, is presented by modifying the exact algorithm for obtaining sequential lower and upper bounds on two-terminal reliability. Based on randomly generated large networks, computational experiments are conducted to compare the proposed algorithm to the well-known and widely used edge-packing approximation model and to explore the performance of the proposed bounding algorithm. Computational results reveal that the proposed bounding algorithm is superior to the edge-packing model, and the trade-off of accuracy for execution time ensures that an exact difference between upper and lower bounds on two-terminal reliability can be obtained within an acceptable time.     

A dynamic bounding algorithm for approximating multi-state two-terminal reliability

This paper modifies Jane and Laih’s (2008) exact and direct algorithm to provide sequences of upper bounds and lower bounds that converge to the NP-hard multi-state two-terminal reliability. Advantages of the modified algorithm include (1) it does not require a priori the lower and/or upper boundary points of the network, (2) it derives a series of increasing lower bounds and a series of decreasing upper bounds simultaneously, guaranteed to enclose the exact reliability value, and (3) trade-off between accuracy and execution time can be made to ensure an exact difference between the upper and lower bounds within an acceptable time. Examples are analyzed to illustrate the bounding algorithm, and to compare the bounding algorithm with existing algorithms. Computational experiments on a large network are conducted to realize the performance of the bounding algorithm.     

InGaAs---GaAs pseudomorphic heterostructure transistors prepared by MOVPE

In this paper, we will demonstrate two new InGaAs-GaAs pseudomorphic heterostructure transistors prepared by MOVPE technology, i.e. InGaAs-GaAs graded-concentration doping-channel MIS-like field effect transistors (FET) and heterostructure-emitter and heterostructure-base (InGaAs-GaAs) transistors (HEHBT). For the doping-channel MIS-like FET, the graded In_0.15Ga_0.85As doping-channel structure is employed as the active channel. For a 0.8 × 100 μm² gate device, a breakdown voltage of 15 V, a maximum transconductance of 200 mS/mm, and a maximum drain saturation current of 735 mA/mm are obtained. For the HEHBT, the confinement effect for holes is enhanced owing to the presence of GaAs/InGaAs/GaAs quantum wells. Thus, the emitter injection efficiency is increased and a high current gain can be obtained. Also, due to the lower surface recombination velocity of InGaAs base layers, the potential spike of the emitter-base (E-B) junction can be reduced significantly. This can provide a lower collector-emitter offset voltage. For an emitter area of 4.9 × 10⁻⁵ cm², the common emitter current gain of 120 and the collector-emitter offset voltage of 100 mV are obtained.