Der Aufbau der ebenen Geometrie ohne das Symmetrieaxiom

Ohne ZusammenfassungAuszug aus der Inaugural-Dissertation (Göttingen 1922).     

Bei der Zuckerbestimmung

Ohne Zusammenfassung     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Thin film synthesis and the influence of irradiation-induced defects on the superconductivity of La1.8Sr0.2CuO4

Thin superconducting films of La_1.8Sr_0.2CuO₄ have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT _c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT _c onset.     

Zinn und Antimon in Legierungen

Ohne Zusammenfassung     

Standardization of Methods for Characterizing the Surface Geometry of Solids

Since a comprehensive survey published in 1999 [1] much work was done in standardizing measuring methods to characterize the surface geometry of dispersed and/or porous solids and to certify reference materials. The present paper is an extension of a short communication [2]. It gives a survey on existing standards and reports on new drafts and proposals.     

Time-resolved electron transport studies on InGaAs/GaAs-QWIPs

Due to the short internal response time, quantum-well infrared photodetectors (QWIPs) are interesting for high-speed applications such as heterodyne spectroscopy or laser pulse monitoring. We studied the photocurrent transients of InGaAs/GaAs-QWIPs after irradiation with infrared laser pulses of 250 fs duration. The excitation wavelength of about 9 μm matches the peak wavelength of the QWIP structure. The photocurrent transient consists of two different dynamical components, representing the fast photoionization in the quantum-wells and the slow injection current that compensates the remaining space charge. The investigations of the different components as a function of temperature and bias voltage were performed on a nanosecond time-scale. The experimental separation of the two photocurrent contributions allows us to determine the photoconductive gain. The Fourier transform of the photocurrent transient was compared with other experimental methods including heterodyne detection and microwave rectification. The quantitative agreement between these different measurement techniques is excellent.