Asymptotic expansion of the logistic midrange

Using the symbolic computation program MAPLE, we compute several terms of an asymptotic expansion for the distribution function of the logistic midrange.     

Exploring Little Higgs models with ATLAS at the LHC-

The European Physical Journal C - We discuss possible searches for the new particles predicted by Little Higgs Models at the LHC. By using a simulation of the ATLAS detector, we demonstrate how the...     

Knowing and Teaching Middle School Mathematics: A Professional Development Course for In‐Service Teachers

This article describes a professional development course intended to improve the content understanding of middle school mathematics teachers. The design of the course included three professional learning strategies: problem solving, examination of student thinking, and discussion of research. The concepts studied in the course included multi‐digit subtraction, multi‐digit multiplication, operations with fractions, and concepts of area and perimeter. Results from pre‐ and post‐tests administered to the nineteen participants indicate a significant increase in the mean score for each concept and document growth in the teachers' content understanding. In particular, their solutions moved from primarily procedural to more conceptual. Responses to an open‐ended survey indicate other important aspects of the professional development. Examples of teachers' work and comments are included.     

Straightforward conversion of alcohols into dibenzenesulfonimides

The reaction of various alcohols with N-fluorodibenzenesulfonimide and triphenylphosphine leads to the corresponding dibenzenesulfonylated amines in high yields.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Growth and characterisation of Eu doped GaN thin films

We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Simultaneous observation of coherent and incoherent resonant re-emission in the condensed phase

We report simultaneous observation of coherent resonance Raman scattering and incoherently broadened resonance fluorescence following excitation of cytochrome c in the α(0, 0) region. The influence of incoherent broadening processes on resonance Raman scattering experiments is considered.     

Concise synthesis of anhydrovinblastine from leurosine

[reaction: see text] The Cp(2)TiCl-mediated deoxygenation of leurosine (1) afforded anhydrovinblastine (4) in good yield. Furthermore, as the reaction proceeded via a carbon-centered radical intermediate, this transient was also trapped by a hydrogen-atom donor to afford selectively reduced alkaloid 10.     

Highly efficient recycling of a "sandwich" type polyoxometalate oxidation catalyst using solvent resistant nanofiltration

A "sandwich" type polyoxometalate catalyst ([MeN(n-C8H17)3]12[WZn3(ZnW9O34)2]) was very efficiently recycled by nanofiltration with almost quantitative retention, using an alpha-alumina supported mesoporous gamma-alumina membrane.