Dependence of “Reststrahlen” bands in far-infrared reflectivity on configuration of GaAs/AlAs multiple quantum well heterostructures

Far infrared reflectivity measurements are performed on a series of GaAs/AlAs multiple quantum well (MQW) heterostructures with systematically varied thicknesses of the constituent layers. In addition to the artificial anisotropy we observe two distinct bulk-like Reststrahlen regions. The widths of the GaAs-like and the AlAs-like Reststrahlen bands strongly depend on the relative thicknesses of the constituent layers of the MQW heterostructures, in excellent agreement with the predictions of the effective-medium theory.Prof. Aldo Cingolani passed away just before the publication of this article. We would like to dedicate this paper to his memory