Analysis of hydroquinone and some of its ethers by using capillary electrochromatography

Capillary electrochromatography (CEC) was used for the analysis of relevant compounds in cosmetic preparation. Hydroquinone (HQ) and some of its ethers (methyl-, dimethyl-, benzyl-, phenyl-, propyl-HQ derivatives) were analyzed by using an octadecylsilica (ODS) stationary phase packed in fused-silica capillary (100 microm I.D.; 30 cm and 21.5 cm total and effective lengths, respectively). 20 mM Ammonium acetate pH 6-acetonitrile (50-70%) were the mobile phases used for the experiments. The acetonitrile (ACN) content strongly influenced the resolution of the studied compounds as well as the efficiency and the retention factor. Baseline resolution for the studied analytes was achieved at both the lowest and the highest percentage of ACN, the last one providing the shortest analysis time. Mobile phase containing 70% of ACN was therefore used for the analysis of an extract of skin-toning cream declared to contain HQ. Good repeatability of both retention times, peak areas and peak areas ratio (Asample/Ainternational standard) was found. The calibration graphs were linear in the concentration range studied (5-90 microg/ml) with correlation coefficients between 0.9975 and 09991. The analysis of the cosmetic preparation revealed the presence of HQ (1.72%, w/w) and of two additional peaks (not identified).     

From Si nanowires to porous silicon: the role of excitonic effects

We show that the electronic and optical properties of silicon nanowires, with different size and orientation, are dominated by important many-body effects. The electronic and excitonic gaps, calculated within first principles, agree with the available experimental data. Huge excitonic effects, which depend strongly on wire orientation and size, characterize the optical spectra. Modeling porous silicon as a collection of interacting nanowires, we find an absorption spectrum which is in very good agreement with experimental measurements only when the electron-hole interaction is included.     

Electronic vacancy states in silicon by the chemical pseudopotential method

The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential method by creating a vacancy in a large crystal unit cell containing up to 54 atoms. A localized vacancy state is found in the forbidden gap and its energy is shown to be convergent with respect to the size of the cell. The density of states of the valence band is modified by the presence of the vacancy with additional peaks which give charge localization on the vacany nearest neighbour atoms.     

Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties.     

Electronic and optical properties of Si and Ge nanocrystals: An ab initio study

First-principles calculations within density functional theory and many-body perturbation theory have been carried out in order to investigate the structural, electronic and optical properties of undoped and doped silicon nanostructures. We consider Si nanoclusters co-doped with B and P. We find that the electronic band gap is reduced with respect to that of the undoped crystals, suggesting the possibility of impurity based engineering of electronic and optical properties of Si nanocrystals. Finally, motivated by recent suggestions concerning the chance of exploiting Ge dots for photovoltaic nanodevices, we present calculations of the electronic and optical properties of a Ge₃₅H₃₆ nanocrystal, and compare the results with those for the corresponding Si₃₅H₃₆ nanocrystals and the co-doped Si₃₃BPH₃₆.