Can a Procedure for the Growth of Single-layer Graphene on Copper be used in Different Chemical Vapor Deposition Reactors?

In the last decade, catalytic chemical vapor deposition (CVD) has been intensively explored for the growth of single-layer graphene (SLG). Despite the scattering of guidelines and procedures, variables such as the surface texture/chemistry of catalyst metal foils, carbon feedstock, and growth process parameters have been well-scrutinized. Still, questions remain on how best to standardize the growth procedure. The possible correlation of procedures between different CVD setups is an example. Here, two thermal CVD reactors were explored to grow graphene on Cu foil. The design of these setups was entirely distinct, one being a “showerhead” cold-wall type, whereas the other represented the popular “tubular” hot-wall type. Upon standardizing the Cu foil surface, it was possible to develop a procedure for cm²-scale SLG growth that differed only by the carrier gas flow rate used in the two reactors.     

Evaluating cost impacts on reverse logistics using an Economic Order Quantity (EOQ) model with environmental and social considerations

Central European Journal of Operations Research - Societal awareness and legislation changes concerning sustainability have affected how organizations generate value for stakeholders, as well as...     

Cycloparaphenylene (CPP) series are molecular models for graphene armchair edges: trends in their aromaticity and cyclic conjugation are evaluated

Cycloparaphenylene ([r]CPP) and cyclacene ([r]CA) series are models for short carbon nanotubes. It is shown that armchair edges in model cycloparaphenylenes possess greater aromaticity and cyclic conjugation than do zigzag edges in model cyclacenes. According to Aihara’s bond resonance energy (BRE) and Bosanac and Gutman energy effect (ef) measurements, cycloparaphenylenes are twice as aromatic as cyclacenes. The general solution of all eigenvalues of all members of the cycloparaphenylene series is given. The origin of the recurrence of some eigenvalues are determined.     

Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells

Confined excitons in non-abrupt GaAs/Al_xGa_1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al_0.3Ga_0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.     

The influence of Na<Superscript>+</Superscript> on the anilinepropylsilica xerogel synthesis by using the fluoride nucleophilic catalyst

Anilinepropylsilica xerogel was obtained by using an appropriate organosilane and tetraethyl orthosilicate as precursor reagents. The gelation was carried out using HF and NaF as catalysts. The presence of Na⁺ (when NaF was used) resulted in a decrease in the final organic content of the materials. This effect was interpreted as an inhibition of the organosilane polycondensation possibly due to the Na⁺ interaction with the SiO^- groups of the hydrolyzed organosilane. The presence of Na⁺ also results in morphological changes in the xerogels.     

Amplitude des oscillations d'ondes solitaires généralisées

Various physical systems of dispersive waves admit solutions in the form of generalized solitary waves. Such waves result from the resonance between a long localized wave and short periodic oscillations. Many estimates (rigorous and numerical) have been given for the amplitude of the ripples in the tail of the generalized solitary wave when its central part has a sech² shape. This Note provides estimates (not yet rigorous) for the ripple amplitude when the central part is flat and wide. To cite this article: C. Fochesato, F. Dias, C. R. Acad. Sci. Paris, Ser. I 337 (2003).     

A greedy algorithm for multicut and integral multiflow in rooted trees

We present an O(min(Kn,n²)) algorithm to solve the maximum integral multiflow and minimum multicut problems in rooted trees, where K is the number of commodities and n is the number of vertices. These problems are NP-hard in undirected trees but polynomial in directed trees. In the algorithm we propose, we first use a greedy procedure to build the multiflow then we use duality properties to obtain the multicut and prove the optimality.