GLOBAL WELL-POSEDNESS FOR FRACTIONAL NAVIER-STOKES EQUATIONS IN VARIABLE EXPONENT FOURIER-BESOV-MORREY SPACES

In this paper we study the Cauchy problem of the incompressible fractional Navier-Stokes equations in critical variable exponent Fourier-Besov-Morrey space F N^s(·)p(·),h(·),q(R³)with s(·)=4-2α-3/p(·).We prove global well-posedness result with small initial data belonging to FN^4-2α-3/p(·)p(·),h(·)q(R³).The result of this paper extends some recent work.     

Designing spirobifullerene core based three-dimensional cross shape acceptor materials with promising photovoltaic properties for high-efficiency organic solar cells

The development of organic electron acceptor materials is one of the key factors for realizing high-performance organic solar cells (OSCs). Nonfullerene electron acceptors, compared to traditional fullerene acceptor materials, have gained much impetus owing to their better optoelectronic tunabilities and lower cost, as well as higher stability. Therefore, 5 three-dimensional (3D) cross-shaped acceptor materials having a spirobifullerene core flanked with 2,1,3-benzothiadiazole are designed from a recently synthesized highly efficient acceptor molecule SF(BR) ₄ and are investigated in detail with regard to their use as acceptor molecules in OSCs. The density functional theory (DFT) and time-dependent DFT (TDDFT) calculations have been performed for the estimation of frontier molecular orbital (FMO) analysis, density of states analysis, reorganization energies of electron and hole, dipole moment, open-circuit voltage, photo-physical characteristics, and transition density matrix analysis. In addition, the structure-property relationship is studied, and the influence of end-capped acceptor modifications on photovoltaic, photo-physical, and electronic properties of newly selected molecules ( H1-H5 ) is calculated and compared with reference ( R ) acceptor molecule SF(BR) ₄ . The structural tailoring at terminals was found to effectively tune the FMO band gap, energy levels, absorption spectra, open-circuit voltage, reorganization energy, and binding energy value in selected molecules H1 to H5 . The 3D cross-shaped molecules H1 to H5 suppress the intermolecular aggregation in PTB7-Th blend, which leads to high efficiency of acceptor material H1 to H5 in OSCs. Consequently, better optoelectronic properties are achieved from designed molecules H1 to H5 . It is proposed that the conceptualized molecules are superior than highly efficient spirobifullerene core-based SF(BR) ₄ acceptor molecules and, thus, are recommended to experiments for future developments of highly efficient solar cells.     

Guanidinium nitrate: a novel reagent for aryl nitrations

Nitration of various aromatic compounds utilising guanidinium nitrate in 85% sulfuric acid as a nitrating agent has been studied.     

Entangled States Based on Two Coherent States 3π/2 out of Phase

Entangled states based on two coherent states 3π/2 out of phase with each other, i.e. ｜α〉 and e^iФ｜-iα〉, as well as on a special state with a relative phase Ф = ｜α｜^2, are constructed. By analysing the amount of entanglement it is evident that entangled states based on this special state can be used as an excellent resource for quantum teleportation. It is also revealed that these entangled states possess some nonclassical features.     

Modified Householder iterative method free from second derivatives for nonlinear equations

In this paper, we suggest and analyze a new two-step predictor–corrector type iterative method free from second derivatives for solving nonlinear equations of the type f(x)=0. This new method includes the two-step Newton method as a special case. We prove that the new iterative method is of fourth-order. Several examples are given to illustrate the efficiency of this new method and its comparison with other iterative methods. This method can be considered as a significant improvement of the Newton method and its variant forms.     

Large signal performance of micromachined silicon inductive microphones

A mathematical model for the open-circuit output voltage of a micromachined silicon inductive microphone is presented. The model, basically a sine-series function, can easily yield closed-form expressions for the amplitudes of the output components resulting from a multisinusoidal input acoustic pressure. The special case of an equal-amplitude two-tone acoustic pressure input is considered in detail. The results show that, the microphone generates both even and odd-order harmonic and intermodulation products.     

Some geometrical aspects of semidefinite linear complementarity problems

This article studies some geometrical aspects of the semidefinite linear complementarity problem (SDLCP), which can be viewed as a generalization of the well-known linear complementarity problem (LCP). SDLCP is a special case of a complementarity problem over a closed convex cone, where the cone considered is the closed convex cone of positive semidefinite matrices. It arises naturally in the unified formulation of a pair of primal-dual semidefinite programming problems. In this article, we introduce the notion of complementary cones in the semidefinite setting using the faces of the cone of positive semidefinite matrices and show that unlike complementary cones induced by an LCP, semidefinite complementary cones need not be closed. However, under R₀-property of the linear transformation, closedness of all the semidefinite complementary cones induced by L is ensured. We also introduce the notion of a principal subtransformation with respect to a face of the cone of positive semidefinite matrices and show that for a self-adjoint linear transformation, strict copositivity is equivalent to strict semimonotonicity of each principal subtransformation. Besides the above, various other solution properties of SDLCP will be interpreted and studied geometrically.     

Empirical model for the current-voltage characteristic of resonant-tunneling devices

An empirical model is presented for the current-voltage characteristics of resonanttunneling (RT) devices. By using this model an analytical study of millimeter-band electronic circuits employing RT devices can be performed.