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1.
Development of supramolecular methods to further activate a highly reactive intermediate is a fascinating strategy to create novel potent catalysts for activation of inert chemicals. Herein, a supramolecular approach to enhance the oxidizing ability of a high-valent oxo species of a nitrido-bridged iron porphyrinoid dimer that is a known potent molecular catalyst for light alkane oxidation is reported. For this purpose, a nitrido-bridged dinuclear iron complex of porphyrin-phthalocyanine heterodimer 3 5+, which is connected through a fourfold rotaxane, was prepared. Heterodimer 3 5+ catalyzed ethane oxidation in the presence of H2O2 at a relatively low temperature. The site-selective complexation of 3 5+ with an additional anionic porphyrin (TPPS4−) through π–π stacking and electrostatic interactions afforded a stable 1:1 complex. It was demonstrated that the supramolecular post-synthetic modification of 3 5+ enhances its catalytic activity efficiently. Moreover, supramolecular conjugates achieved higher catalytic ethane oxidation activity than nitrido-bridged iron phthalocyanine dimer, which is the most potent iron-oxo-based molecular catalyst for light-alkane oxidation reported so far. Electrochemical measurements proved that the electronic perturbation from TPPS4− to 3 5+ enhanced the catalytic activity.  相似文献   
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A liquid‐crystalline epoxy resin was cured at two different temperatures. The phases of the cured systems clearly showed isotropic and nematic polydomain structures, which depended on the curing temperature. The fracture toughness of the systems was measured, and the fracture mechanism was investigated with polarized IR measurements. The nematic polydomain structure system showed considerably higher fracture toughness than the isotropic structure. Moreover, both systems exhibited a reorientation of the network chains near the fracture surface during the fracture process, and the region of the network reorientation in the nematic polydomain structure system was larger than that in the isotropic structure system. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4044–4052, 2004  相似文献   
4.
In this paper we consider the (t, n)-threshold visual secret sharing scheme (VSSS) in which black pixels in a secret black-white images is reproduced perfectly as black pixels when we stack arbitrary t shares. This paper provides a new characterization of the (t, n)-threshold visual secret sharing scheme with such a property (hereafter, we call such a VSSS the (t, n)-PBVSSS for short). We use an algebraic method to characterize basis matrices of the (t, n)-PBVSSS in a certain class of matrices. We show that the set of all homogeneous polynomials each element of which yields basis matrices of the (t, n)-PBVSSS becomes a set of lattice points in an (nt+1)-dimensional linear space. In addition, we prove that the optimal basis matrices in the sense of maximizing the relative difference among all the basis matrices in the class coincides with the basis matrices given by Blundo, Bonis and De Santis [3] for all nt ≥ 2.  相似文献   
5.
Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N2) and hydrogen (H2) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 1010 eV−1 cm−2 for the BCN/GaN structure with mixed N2 and H2 plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 1010 eV−1 cm−2 is maintained.  相似文献   
6.
Malyngamide X ( 1 ), the first (7R)‐lyngbic acid connected to a new tripeptide backbone, was isolated from the Thai sea hare Bursatella leachii. The gross structure of 1 was established on the basis of 1D and 2D NMR and mass spectroscopic data. Combination of the NMR spectroscopic experiments with α‐methoxy‐α‐(trifluoromethyl)phenylacetic acid esters, 2,2,2‐trifluoro‐1‐(9‐anthryl)ethanol chiral solvating agent, and molecular mechanics of 1 and the synthetic molecular fragments allowed us to determine the absolute stereochemistry of all six stereogenic centers without hydrolytic degradation of the compound. Compound 1 displayed moderate cytotoxic, antitubercular, and antimalarial properties.  相似文献   
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Electron acceleration due to a wakefield excited by a ultrashort-pulse intense laser propagating through a finite-length underdense plasma layer is studied by two-dimensional particle-in-cell simulation. The electron energy distribution is analyzed for moderate to high intensity. For the electron density, where the pulse length is almost half of the plasma wavelength, dramatic changes of the density structure occur with cavity and bunch formation with an increase in the laser intensity, also leading to the appearance of a fast electron component well confined in phase space. The analytical form of the fast electron energy spectrum is also presented.  相似文献   
9.
A small-angle X-ray scattering (SAXS) study was performed to reveal the nanometer scale hybrid structure of Si---Ti---C---O fibers prepared by the pyrolysis of polytitanocarbosilane. The SAXS profile for Si---Ti---C---O fibers is attributed to two different types of scattering entities: an anisotropic contribution from long filaments with diameters hundreds to thousands of Ångströms and an isotropic contribution from β-SiC fine clusters of about a nanometer in diameter. A drastic degradation in the tensile strength of the fibers is correlated to the characteristic variations in their long-and medium-range structure.  相似文献   
10.
We report on electron g-factor in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.  相似文献   
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