强流四脉冲电子束源实验研究

 为了进行强流多电子束源研究，对现有2MeV LIA 注入器进行了四脉冲改造，二极管脉冲电压约500kV。实验研究了天鹅绒阴极在四脉冲条件下的发射能力、传导电流负载效应以及阴极等离子体运动对阴极电子发射和束能量的影响。利用空间电荷限制流模型推算出阴极等离子体膨胀速率在1 ~4cm/μs之间。     

闭合回路在磁场中的运动

1载流圆环在匀强磁场中的受力情况 半径为r0,通以电流I的弹性圆环,放在光滑的水平面上,磁感强度为B0的匀强磁场垂直穿过圆环,如图1所示.     

激光标线的原理和实验

根据几何光学知识分析了激光标线原理.理论和实验表明:激光标线长度与激光光束形状、光学元件形状及材料折射率有关.并讨论了激光标线向两侧扩展的原因.     

含氰基的酚醛树脂及其碳纤维复合材料

含氰基的酚醛树脂，具有优异的耐高温性能和高温下的机械强度，在３１５℃下性能变化甚小；不着火，发烟量低，有良好的加工成型性能。热固化过程中氰基成三嗪环而交联，没有小分子脱出，是一类具有广泛发展前景的新型热固性树脂。     

Selected-area growth of carbon nanotubes by the combination of focused ion beam and chemical vapor deposition techniques.

In this article, we report a technique for growing carbon nanotubes in a more controllable fashion, which enables us to synthesize nanotubes directly in various forms of designed patterns. This nanofabrication process is based on a combination of focused ion beam (FIB) and chemical vapor deposition (CVD) techniques. In this process, arrays of conductive patterns were first deposited on silicon substrates by directing a gaseous compound (C(9)H(16)Pt) via the capillary needle-sized nozzles within a FIB system. The substrates were then coated with catalyst and further modified by the FIB to localize the position of the catalyst. Finally, the growth of carbon nanotubes on the designed substrates was carried out by CVD of hydrocarbon gases. This fabrication technique has the advantage of positioning carbon nanotubes in selected locations. This may open up opportunities for the direct synthesis of carbon nanotubes onto almost any substrate material, thus allowing fabrication of carbon nanotube-based devices.     

浅议物理实验教学环节改革

为进一步提高大学物理实验的教学质量，本文就实验课的预习、操作、实验报告的撰写及考核方法进行了探讨。     

An experimental investigation of high permittivity dielectric resonators for millimeter-wave microstrip components

This paper proposes a new type of high permittivity whispering gallery mode cylindrical dielectric resonators with a geometry which is very suitable for use in microstrip type integrated circuits. These oversized resonators, together with high Q factors and ease of fabrication, are potentially interesting for millimeter wave integrated filters and oscillators. In this paper, we report an experimental investigation of such resonators carried out in Ka band (26.5–40 GHz). Measured results including resonant frequencies and loaded quality factors will be presented. Application to millimeter wave filters will also be demonstrated.