Removal of oxygen from silicon by electron beam melting

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10^?5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.     

Metamaterial absorber based on circular ring structure with and without copper lines

This paper presents the analysis of circular ring metamaterial absorber with the existing of copper lines. The structure is designed using lossy FR4 substrate with thin copper layers. The circular ring shape with copper lines is printed on the top surface of FR4 substrate, while at the bottom surface is printed with full copper ground plane. Parametric study is done to investigate the effect of copper lines on the resonance frequency. From the simulation, the circular ring metamaterial absorber with vertical copper lines can resonates at lower frequency, but this structure is polarized sensitive. This drawback can be improved by adding horizontal copper lines together with the vertical copper lines. The circular ring structure with vertical and horizontal copper lines is not only polarization insensitive, but it can works at wide operating angle of incident waves.     

Comparison between discrete dipole approximation and other modelling methods for the plasmonic response of gold nanospheres

We investigate the plasmonic response of gold nanospheres calculated using discrete dipole approximation validated against the results from other discretization methods, namely the finite-difference time-domain method and the finite-element methods. Comparisons are also made with calculations from analytical methods such as the Mie solution and the null-field method with discrete sources. We consider the nanoparticle interacting with the incident field both in free space and sitting on a planar substrate. In the latter case, discrete dipole approximation with surface interaction is used; this includes the interaction with the ‘image dipoles’ using Sommerfeld integration.     

Miniaturization of GPS patch antennas based on novel dielectric ceramics Zn(1−x)MgxAl2O4 by sol–gel method

The need for miniaturization and weight reduction of GPS patch antennas has prompted the search for new microwave dielectric materials. In this study, a sol–gel method was used to prepare Zn_(1?x)Mg_xAl₂O₄ thin films and fabricate GPS patch antennas at a low annealing temperature (700 °C). X-ray diffraction (XRD) patterns, field emission scanning electron microscopy images, Fourier transform infrared spectra, and optical band gap analyses confirmed the nanostructure of (Mg/Zn)Al₂O₄. The XRD patterns displayed the characteristic peaks of (Mg/Zn)Al₂O₄ with a face-centered cubic structure. Mg addition decreased the crystallite size, surface morphology, and lattice parameters of the resultant films, evidently affecting their density and dielectric constant (? _r ). Based on the material investigated and microwave antenna theory, GPS patch antennas were fabricated using Zn_(1?x)Mg_xAl₂O₄ and then studied using a PNA series network analyzer. The fabricated patch antennas with different ? _r ceramics decreased in size from 12.5 to 10.8 cm². The patch antennas resonated at a frequency of 1.570 GHz and provided a return loss bandwidth between ?16.6 and ?20.0 dB; their bandwidth also improved from 90 to 255 MHz. The GPS patch antenna fabricated from Zn_0.70Mg_0.30Al₂O₄ showed an excellent combination of return loss (?20.0 dB), small size (10.8 cm²), and wide bandwidth (255 MHz). Therefore, addition of Mg improves antenna performance and decreases the dimensions of the device.     

Electronic structures and bonding of oxygen on plutonium layers

Oxygen adsorptions on -Pu (100) and (111) surfaces have been studied at both non-spin-polarized and spin-polarized levels using the generalized gradient approximation of density functional theory (GGA-DFT) with Perdew and Wang (PW) functionals. The center position of the (100) surface is found to be the most favorable site with chemisorption energies of 7.386 eV and 7.080 eV at the two levels of theory. The distances of the oxygen adatom from the Pu surface are found to be 0.92 Å and 1.02 Å, respectively. For the (111) surface non-spin-polarized calculations, the center position is also the preferred site with a chemisorption energy of 7.070 eV and the distance of the adatom being 1.31 Å, but for spin-polarized calculations the bridge and the center sites are found to be basically degenerate, the difference in chemisorption energies being only 0.021 eV. In general, due to the adsorption of oxygen, plutonium 5f orbitals are pushed further below the Fermi energy, compared to the bare plutonium layers. The work function, in general, increases due to oxygen adsorption on plutonium surfaces.Received: 20 July 2004, Published online: 9 September 2004PACS: 71.15.-m Methods of electronic structure calculations - 71.15.Mb Density functional theory, local density approximation, gradient and other corrections - 71.15.Nc Total energy and cohesive energy calculations 71.27. + a Strongly correlated electron systems; heavy fermions     

Effect of time delay on a harvested predator-prey model

The predator-prey systems with harvesting have received a great deal of attentions for last few decades. Incorporating discrete time delays into predator-prey models could induce instability and bifurcation. In this paper we are interested in studying the combined effects of harvesting and discrete time delay on the dynamics of a predator-prey model. A comparative analysis is provided for stability behaviour in absence as well as in presence of time delay. The length of discrete time delay to preserve stability of the model system is obtained. Existence of Hopf-bifurcating small amplitude periodic solutions is derived by taking discrete time delay as a bifurcation parameter.     

A density functional theoretic study of novel silicon-carbon fullerene-like nanostructures: Si40C20, Si60C20, Si36C24, and Si60C24

Fullerene-like silicon nanostructures with twenty and twenty-four carbon atoms on the surface of the Si₆₀ cage by substitution, as well as inside the cage at various orientations have been studied within the generalized gradient approximation to density functional theory. Full geometry optimizations have been performed without any symmetry constraints using the Gaussian 03 suite of programs and the LANL2DZ basis set. Thus, for the silicon atom, the Hay-Wadt pseudopotential with the associated basis set is used for the core electrons and the valence electrons, respectively. For the carbon atom, the Dunning/Huzinaga double zeta basis set is employed. Electronic and geometric properties of these nanostructures are presented and discussed in detail. Optimized silicon-carbon fullerene like nanostructures are found to have increased stability compared to the bare Si₆₀ cage and the stability depends on the number and the orientation of carbon atoms, as well as on the nature of silicon-carbon and carbon-carbon bonding.     

Effect of Ge4+ and Mg2+ doping on superconductivity,fluctuation induced conductivity and interplanar coupling of TlSr2CaCu2O7−δ superconductors

Substitution of Ge⁴⁺ in place of Cu in Tl_0.85Cr_0.15Sr₂CaCu_2?xGe_xO_7?δ (x = 0–0.6) showed initial increase in zero critical temperature value, T_{c zero} from 98 K (x = 0) to 100 K (x = 0.1) and in the range of 85–86 K for x = 0.2–0.3. The slow decrease in T_{c zero} is unexpected as tetravalent Ge⁴⁺ substitution is expected to strongly reduce hole concentration in the samples and suppress T_{c zero}. Excess conductivity analyses of resistance versus temperature data based on Asmalazov–Larkin (AL) theory revealed that the substitution induced 2D-to-3D transition of fluctuation induced conductivity with the highest transition temperature, T_2D–3D observed at x = 0.1. FTIR spectroscopy analysis indicates Ge⁴⁺ substitution cause reduction in CuO₂/GeO₂ interplanar distance while our calculation based on Lawrence–Doniach model revealed highest superconducting coherence length, ξ_c(0) and interplanar coupling, J at x = 0.3. On the other hand, substitution of divalent Mg²⁺ for Ca²⁺ in (Tl_0.5Pb_0.5)(Sr_1.8Yb_0.2)(Ca_1?yMg_y)Cu₂O₇ (y = 0–1.0), which is not expected to directly vary hole concentration, surprisingly caused T_{c zero} to increase from 89.6 K (y = 0) to an optimum value of 95.9 K (y = 0.6) before decreasing with further increase in y. Excess conductivity analyses showed 2D-to-3D transition of fluctuation induced conductivity for all samples where the highest T_2D–3D was at y = 0.4. Similar calculation revealed highest values of ξ_c(0) and J also at y = 0.4. FTIR analysis of the samples indicates inequivalent Cu(1)O(2)Pb/Tl lengths and possible tilting of CuO₂ plane as a result of Mg²⁺ substitution. The increased ξ_c(0) and J as a result of the Ge⁴⁺ and Mg²⁺ substitutions are suggested to contributed to sustenance of superconductivity above 80 K in the samples.     

Erbium in silicon–germanium quantum wells

Strained Si_1−xGe_x/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si_1−xGe_x/Si quantum wells and relaxed Si_1−xGe_x, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1×10¹⁸ and 5×10¹⁸ cm⁻³ throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si_1−xGe_x/Si layers, but erbium-implanted samples containing Si_1−xGe_x exhibit defect luminescence in the region of 0.9–1.0 eV. These defects are also present when Si_1−xGe_x/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si_0.87Ge_0.13/Si structure at a drive current density of only 1.8 mA/cm².