Longitudinal bulk strain solitons in a hyperelastic rod with quadratic and Cubic nonlinearities

Theoretical and Mathematical Physics - We study long nonlinear longitudinal bulk strain waves in a hyperelastic rod of circular cross section in the framework of general weakly nonlinear elasticity...     

Reradiation effects,lifetimes and probabilities of band-to-band transitions in direct A3B5 compounds of GaAs type

A determination has been made of the efficiency and decay time of edge emission for some direct band-gap A₃B₅ semiconductor compounds (the active region of matched heterostructures) with the reradiation effect being taken into account. It has been established that the lifetime of minority carriers is due to band-to-band radiative transitions, the rate of which correspond to the simple quantum-mechanical theory.     

On the peculiarities of the short-time (tg < 10 ms) solid solution LPE growth onto the moving substrate

The peculiarities of InGaAsP ultra-thin layer LPE deposition onto a moving substrate are discussed. The abnormal dependency of the layer thickness on the growth melt supersaturation was found at sliding velocity higher than 0.1 m/s. The growth cell shape was shown to be the main factor affecting the thickness of the deposited layer at growth times shorter than 10 ms. The melt motion influence on the LPE deposition process at high sliding velocities is discussed.     

The efficiency and radiative lifetime concentration dependences for the direct band-gap GaAs-like semiconductors

Values of the radiative lifetimes in doped GaAs calculated within the framework of a simple quantum mechanical model are shown to be in good agreement with experimental values obtained for the active region material of the AlGaAs/GaAs heterostructures. Variations of the dominant recombination mechanism with the doping level are discussed. In particular, Auger nonradiative recombination mechanism is shown to play a prominent role in heavily doped p-type material.