排序方式: 共有169条查询结果,搜索用时 15 毫秒
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研究了存在次近邻相互作用(耦合)时Heisenberg XX链的纠缠特性. 结果表明对近邻格点, 随着耦合常数J的变化, 次近邻相互作用的存在可能使其纠缠度增大或者减小; 而对次近邻格点, 引进次近邻相互作用却可以产生纠缠, 并且使其随着|J|的增大而增大. 近邻格点间纠缠存在的临界温度Tc随着J的增大而降低, 次近邻格点间纠缠存在的临界温度Tc随着|J|的增大而升高. 此外对纠缠W态的制备, 次近邻相互作用的存在还使得三量子位情形时W态产生的时刻改变, 而对于四量子位情形却没有影响. 相似文献
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多壁碳纳米管-Nafion复合膜修饰玻碳电极测定硝苯地平的研究 总被引:8,自引:0,他引:8
研制了以Nafion分散羧基化多壁碳纳米管的化学修饰电极(Nafion-MWCNTs/GC),研究了硝苯地平(NIF)在修饰电极上的电化学行为和测定方法。实验结果表明,在0.1mol/LNH3-NH4Cl(pH9.6)溶液中,Nafion-MWCNTs/GC,对NIF具有明显的催化和增敏作用,还原峰电位由-0.85V(裸电极)正移到-0.75V(vs.AgCl/Ag)(修饰电极),灵敏度增加约7倍。对各种实验条件进行了优化。定量测定的线性范围为2.5×10-7~4.5×10-5mol/L,r为0.9974;检出限为8.0×10-8mol/L。探讨了NIF在Nafion-MWCNTs/GC上的电极过程和反应机理,测得在本体系中参与反应的质子数和电子转移数均为4,电子转移系数α为0.41。对NIF药片进行了测定,回收率为94.5%~101.0%。 相似文献
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2,2-联吡啶-3,3-二羧酸桥联的具有2D网格结构的Mn配位聚合物的合成、晶体结构 总被引:2,自引:0,他引:2
A Manganese(Ⅱ) polymer {[Mn(bpdc)(bipy)(H2O)]·4.5H2O}n has been synthesized (bpdc=2,2-bipyridine-3,3-dicarboxylate,bipy=4,4-bipyridine) and characterized by IR, UV, elemental analysis and X-ray crystal structure determination . It crystallizes in Monoclinic system, space group P2/n with a=1.010 13(8) nm, b=1.164 66(9) nm, c=2.147 40(16) nm, β=98.22 20(10)°, V=2.500 4(3) nm3, Z=4, Dc=1.467 g·cm-3, F(000)=1 144, R1=0.049 0, wR2=0.141 2. The crystal structure shows that the Mn2+ ions have octahedral coordination geometry with two coordination situations. The Mn2+ (1) ion is coordinated with two N atoms of two bipy, and chelated by four O atoms from four carboxylate groups of two bpdc ligands. The neighbor Mn2+ (2) ion is coordinated with two oxygen atoms from two water, two N atoms of two 4,4-bipy and two O atoms from two carboxylate groups of two bpdc ligands. Mn(1) and Mn(2) ions are bridged by bpdc and bipy ligands, forming a novel 2D network. CCDC: 651043. 相似文献
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A new Eu(Ⅲ) complex, {[Eu(tta)2(C2H5OH)(NO3)]2(bmp)}·bmp(tta = 2-thenoyltrifluoro- acetonate, bmp = 2,2'-bipyrimidine), has been synthesized and characterized by elemental analysis, IR, luminescence and single-crystal X-ray diffraction analysis. The complex crystallizes in the monoclinic P21/n space group, with a = 11.894(6), b = 14.235(8), c = 19.078(10) , β = 103.423(9)o, V = 3142(3) 3, Z = 2, Mr = 1721.10, Dc = 1.819 g/cm3, F(000) = 1696, the final R = 0.0452 and wR = 0.1398 for 5375 observed reflections with I 2σ(I). In the complex, each Eu(Ⅲ) ion is coordinated with four oxygen atoms from two tta ligands and two nitrogen atoms from a bmp ligand, three oxygen atoms from one NO3- anion and one ethanol molecule, forming a distorted tricapped trigonal prism geometry. Luminescence measurement indicates that the europium complex is a strong red emitter in the solid state at room temperature. 相似文献
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采用N,N′-亚甲基双丙烯酰胺(MBA)为功能单体、钯纳米粒子为掺杂剂、马来松香丙烯酸乙二醇酯为交联剂,在玻碳电极上热聚合具有三甲氧苄啶(TMP)识别性能的钯纳米材料修饰的分子印迹传感膜.采用扫描电镜及红外光谱对合成的钯纳米材料、印迹传感膜的形貌及其结构进行了表征;采用循环伏安法(CV)、交流阻抗法(EIS)对钯纳米粒子掺杂的印迹电极与无掺杂电极的电化学性能进行了研究.结果表明,纳米粒子掺杂的印迹电极与无掺杂电极的表面形貌及电化学性能明显不同.差分脉冲伏安法(DPV)表征结果表明,TMP的浓度在5.0×10-7~4.0 ×10-3 mol/L范围内与脉冲峰电流呈良好的线性关系(R=0.9995),检出限为3.2×10-8 mol/L (S/N=3).此钯纳米粒子掺杂的印迹传感器具有较高的灵敏度.即时电流测定结果表明,新诺明(SMZ)、磺胺嘧啶(SDZ)、葡萄糖 (Glu)、尿素 (Urea)对三甲氧苄啶(TMP)的测定不产生干扰.将此印迹传感器用于实际样品中TMP的检测,加标回收率为96.8%~102.0%. 相似文献
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Quantum state sharing of an arbitrary qudit state by using nonmaximally generalized GHZ state
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We present a scheme for quantum state sharing of an arbitrary qudit state by using nonmaximally entangled generalized Greenberger-Horne-Zeilinger (GHZ) states as the quantum channel and generalized Bell-basis states as the joint measurement basis. We show that the probability of successful sharing an unknown qudit state depends on the joint measurements chosen by Alice. We also give an expression for the maximally probability of this scheme. 相似文献
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研究了多量子位Heisenberg模型中纠缠的时间演化特性, 并给出了平均纠缠度〈C〉和多体纠缠度Q的解析表达式. 结果发现无论是对〈C〉还是对Q随着时间t的不断增长, 它们均先线性的增大, 而后达到一近似稳定状态, 并绕一平衡值做无规则的上下震荡. 若进一步考察N〈C〉则还可以发现, 纠缠上下震荡的平衡值与Heisenberg链的长度几乎无关, 而仅由它们的次近邻耦合常数J决定. 相似文献
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Fan YeXing-Min Cai Fu-Ping DaiShou-Yong Jing Dong-Ping ZhangPing Fan Li-Jun Liu 《Physica B: Condensed Matter》2011,406(3):516-519
Cu-In-O composite thin films were deposited by reactive DC magnetron sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/vis spectrophotometer, four-probe measurement and Seebeck effect measurement, etc. The samples contain Cu, In and O. The ratios of Cu to In and O to In increase with increase in O2 flow rates. The ratio of Cu to In is over 1 and this suggests that Cu is in excess. The obtained Cu-In-O thin films are very possibly made of rhombohedral In2O3 and monoclinic CuO. Transmittance of the films decreases with increase in O2 flow rate. The decrease in transmittance results from increase in Cu content in the films. The optical band gap of all the samples is estimated to be 4.1-4.4 eV, which is larger than those of In2O3 and CuO. The sheet resistance of the films decreases with increase in O2 flow rate. Conductivity of the films is a little low, due to the addition of Cu and the poor crystalline quality of the film. The conduction behavior of the films is similar to that of In2O3 and the conduction mechanism of Cu-In-O thin films is through O vacancy. 相似文献