Structural properties of PbTiO3 and PbZrxTi1−xO3: A quantum‐chemical study

We investigate the structural and electronic properties of pure and Zr‐doped PbTiO₃ crystals. The nature of atomic relaxation around the Zr impurity is studied through quantum‐chemical simulations based on the Hartree–Fock theory and a periodic large unit cell model adopted within the so‐called intermediate neglect of differential overlap approximation. The most stable defect configurations are predicted for different impurity concentrations. The results obtained are compared with those from other theoretical studies and a number of experimental measurements carried out on this technologically important perovskite‐type crystal. © 2001 John Wiley & Sons, Inc. Int J Quantum Chem, 2001     

Semiempirical calculations on WO3 and MXWO3 crystals (M = H,Li, Na)

The monoclinic structure of tungsten trioxide WO₃ has been studied by combining a modified intermediate neglect of differential overlap (INDO) method and the supercell model. The fitted semiempirical parameters describe very well the features of the band structure and crystal structure. Calculations of H, Li, and Na impurities in a WO₃ crystal have been performed to study the absorption spectra and the equilibrium geometries of intercalated impurities. © 1997 John Wiley & Sons, Inc. Int J Quant Chem 63: 729–735, 1997     

Quantum chemical investigation of lanthanum doping effects in tetragonal and rhombohedral PZT materials

Structural and electronic properties of lead–zirconate–titanate (PZT) materials doped with a lanthanum (La) impurity are studied using a quantum‐chemical approach based on the Hartree–Fock theory. Performed geometry optimization in the defective crystals shows that the atomic movements are predominantly outward with respect to the impurity position. It is found that the La impurity enhances a covalent character in the chemical bonding between the Ti and O atoms, as well as the Zr and O atoms situated in the neighborhood of the defect despite the fact that the La‐O interaction remains purely ionic. The occurrence of local energy levels within the band gap of the material is analyzed in light of the available experimental data on La concentration influence upon dielectric and piezoelectric properties in these crystals. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009     

Structural and electronic properties of PbZrxTi1‐xO3 (x = 0.5, 0.375): A quantum chemical study

The structural and electronic properties of the PZT materials PbZr_0.5Ti_0.5O₃ and PbZr_0.375Ti_0.625O₃ were studied by means of a Hartree–Fock quantum chemical semiempirical method that employs a periodic large unit cell (LUC) model. The atomic relaxation observed upon introduction of the Zr impurities resulted in outward oxygen atom displacements along the 〈100〉 direction for the cubic phases and varied oxygen and lead atom movements for the tetragonal structures. For these materials, the conduction bands (CB) were composed mainly of Pb 6p atomic orbitals with less important contributions of Zr 4d and Ti 3d states. The upper valence band (UVB) for the cubic phases was mostly Pb 6s in nature, with minor contribution of O 2p atomic orbitals. The tetragonal phase on the other hand was formed by Pb 6s with some contribution of admixed O 2p with Zr s atomic orbitals. The optical band gap (ΔSCF method) was found to decrease going from the cubic to the tetragonal phase in both titanates. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem 95: 37–43, 2003     

Mott–Wannier excitons in the tetragonal BaTiO3 lattice

Structural and electronic properties of excitons in the tetragonal BaTiO₃ crystal is studied using a quantum chemical method developed for crystals. The obtained defect structure corresponds to the so‐called Mott–Wannier‐type exciton having a considerable distance between the hole and electronic parts of the defect. Performed crystalline lattice relaxation shows displacements of atoms in an extensive defective region of up to 12 atoms. However, the calculated magnitudes of atomic movements are not large, normally not exceeding 0.08 Å. It is also observed that the self‐trapped exciton polarizes the lattice around it. Using the so‐called ΔSCF method, the luminescence energy due to the exciton is found to be equal to 0.94 eV. © 2002 Wiley Periodicals, Inc. Int J Quantum Chem, 2003     

Quantum–chemical study of photo–excited states in tetragonal SrTiO3 lattice

The nature of photo-excited states in SrTiO₃ has been a topic of intense debate during the last few decades. Using a quantum-chemical method developed for crystals, we present a theoretical interpretation of the structural and electronic properties of triplet excitons in the tetragonal SrTiO₃ crystal. Our study demonstrates that the defect structure may correspond to the Mott–Wannier-type exciton having a considerable distance, 2.14Å, between the hole and the electron parts of the defect. The geometry optimization leads to an extensive defective region containing up to five atoms. However, the obtained magnitudes of atomic movements do not exceed 0.15Å. It is also observed that the self-trapped exciton polarizes the lattice around it. Using the so-called (ΔSCF method, the luminescence energy due to the exciton is found to be equal to 1.13 eV. As it corresponds to the infrared part of the spectrum, the experimentally detected green luminescence due to photo-excited states should be attributed to the singlet excitons.     

Schottky defects in cubic lattice of SrTiO3

Structural and electronic properties produced by formation of Schottky defects in cubic structure of SrTiO₃ crystal are investigated by means of a quantum-chemical simulation based on the Hartree-Fock methodology. The occurrence of Sr partial Schottky defect (V_Sr+V_O) and two types of Ti partial Schottky defects (V_Ti+2V_O) is modeled using a supercell containing 135 atoms. Vacancy-induced changes in the positions of their neighboring atoms are analyzed in light of the computed electron density redistribution in the defective region of supercell. The observed local one-electron energy levels in the gap between the upper valence band and the conduction band can be attributed to the presence of anion and cation vacancies.