首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2354篇
  免费   92篇
  国内免费   20篇
化学   1677篇
晶体学   18篇
力学   126篇
数学   280篇
物理学   365篇
  2023年   26篇
  2022年   114篇
  2021年   107篇
  2020年   81篇
  2019年   107篇
  2018年   102篇
  2017年   68篇
  2016年   116篇
  2015年   75篇
  2014年   116篇
  2013年   228篇
  2012年   140篇
  2011年   150篇
  2010年   100篇
  2009年   97篇
  2008年   110篇
  2007年   104篇
  2006年   77篇
  2005年   48篇
  2004年   38篇
  2003年   47篇
  2002年   49篇
  2001年   13篇
  2000年   23篇
  1999年   11篇
  1998年   28篇
  1997年   13篇
  1996年   13篇
  1995年   13篇
  1994年   17篇
  1993年   10篇
  1992年   11篇
  1991年   16篇
  1990年   17篇
  1989年   16篇
  1988年   18篇
  1987年   18篇
  1986年   17篇
  1985年   13篇
  1984年   15篇
  1983年   12篇
  1982年   15篇
  1981年   7篇
  1980年   10篇
  1979年   6篇
  1978年   7篇
  1976年   7篇
  1975年   4篇
  1974年   3篇
  1967年   3篇
排序方式: 共有2466条查询结果,搜索用时 15 毫秒
1.
Journal of Analytical Chemistry - The present study reports the development of a magnetic polyethylene glycol nanocomposite based on graphite reinforcement carbon paste electrode for the sensitive...  相似文献   
2.
In the present paper an analytical potential form is used for overlap repulsive energy, derived by Harrison from quantum mechanical considerations, along with the composite effect of three-body forces and intersublattice displacement. The short-range overlap parameters in Harrison's potential form have direct correlation with the valence state energies for outermost electrons. The potential model is applied to calculate the third and fourth order elastic constants, first and second pressure derivatives of second order elastic constants, Grüneisen parameter and its volume dependence, Anderson parameter, and thermal expansion coefficient for three non-centrosymmetric crystals, viz. CaF2, SrF2 and BaF2. The calculated values of various physical quantities are found to be in good agreement with experimental data.The authors are grateful to Dr. Mansour Khalef, the Head of Physics Department, TNRC, Tajura (Tripoli) for the facilities and encouragements.  相似文献   
3.
The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH4/SiF4 mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH4 and SiF4 radicals show that the SiH4 radicals are important in the nucleation and growth of grains. However, SiF4 radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF4 in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.  相似文献   
4.
5.
A new series of potent uridine phosphorylase inhibitors have been prepared from barbituric acid. Among them, 1-[(2-hydroxyethoxy)methyl]-5-)(m--benzyloxy)benzylbarbituric acid ( 37 , BBBA) is the most promising having a Ki value of 1.1 ± 0.2 nM with uridine phosphorylase from human liver. The new inhibitors are easily synthesized and are better inhibitors of human uridine phosphorylase than their uracil counterparts.  相似文献   
6.
7.
In this paper, we generalize a theorem of Kallman [2, Theorem 1.1] and we resolve the unsettled case there.  相似文献   
8.
Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch2. Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular.  相似文献   
9.
This paper is concerned with the spectral analysis of a one-velocity transport operator with Maxwell boundary condition in L 1-space. After a detailed spectral analysis it is shown that the associated Cauchy problem is governed by a C 0-semigroup. Next, we discuss the irreducibility of the transport semigroup. In particular, we show that the transport semigroup is irreducible. Finally, a spectral decomposition of the solutions into an asymptotic term and a transient one which will be estimated for smooth initial data is given.  相似文献   
10.
A series of unsaturated polyesters based on phthalic anhydride (PHA), maleic anhydride (MA), ethylene glycol (EG), diethylene glycol (DG), triethylene glycol (TG), propylene glycol (PG), styrene (Sty) and acrylonitrile (AN) were prepared. The molecular weights of the prepared polyesters were determined by end-group analysis. The effect of the structure of the resin on its curing behavior has been investigated. On the basis of the experimental study, the following were concluded: (1) The maximum curing temperature (Tmax) is related to the molecular weight of the glycol incorporated in these castings. In this context the Tmax was found to decrease with increasing the molecular weight. Meanwhile the time to peak temperature tmax was increasing. (2) The higher the percentage of AN in the crosslinking monomer system, the slower a resin cures. (3) The values of Tmax were found to be influenced to a large extent by the percentage of AN.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号