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1.
Transparent conducting ZnO:AI thin films with good adhesion and Iow resistivity have been prepared on organic substrates and Coming 7059 glass substrates by r.f. magnetron-sputtering technique at Iow substrate temperature (25-210℃). Structural and photoelectric properties of the deposited films are investigated. The deposited films are polycrystalline with hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. Only the (002) peak is observed.High quality films with resistivity as Iow as 1.0 x 10- 3Ω@ cm and 8.4 x 10- 4Ω@ cm, the average transmittance over 74% and 85% in the wavelength range of the visible spectrum have been obtained on different substrates. 相似文献
2.
用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0.16)薄膜,用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示,MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大,(002)XRD峰半高宽(F
关键词:
xZn1-xO薄膜')" href="#">MgxZn1-xO薄膜
射频磁控溅射
退火 相似文献
3.
MgxZn1-xO thin films have been prepared on silicon substrates by radio
frequency magnetron sputtering at 60℃. The thin films have hexagonal
wurtzite single-phase structure and a preferred orientation with the c-axis
perpendicular to the substrates. The refractive indices of MgxZn1-xO films
are studied at room temperature by spectroscopic ellipsometry over the wavelength
range of 400--760\,nm at the incident angle of 70℃. Both absorption
coefficients and optical band gaps of MgxZn1-xO films are determined by
the transmittance spectra. While Mg content is increasing, the absorption edges of
MgxZn1-xO films shift to higher energies and band gaps linearly increase
from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important
information for the design and modelling of ZnO/ MgxZn1-xO heterostructure
optoelectronic devices. 相似文献
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采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-x)In2xO3(x=01—09)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分x=02时,样品为单斜β-Ga2O3结构;x=05的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善
关键词:
金属有机物化学气相沉积
2(1-x)In2xO3薄膜')" href="#">Ga2(1-x)In2xO3薄膜
蓝宝石衬底
退火 相似文献
6.
采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-χ)In2χO3(χ=0.1-0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分χ=0.2时,样品为单斜β-Ga2O3,结构;χ=0.5的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善,由非晶结构转变为具有(222)单一取向的立方In2O3结构;对于χ=0.8,薄膜为立方In2O3,结构,退火后薄膜的晶体质量得到提高.在可见光区薄膜本身的透过率均达到了85%以上,带隙宽度随样品中Ga含量的改变在3.76-4.43 eV之间变化,且经退火处理后带隙宽度明显增大. 相似文献
7.
Polycrystalline gallium nitride films with hexagonal structure were prepared by a post-nitridation technique. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 368 nm were observed at room temperature. The 368 nm peak is PL from band-edge emission. The blue luminescence is attributed to the transition from deep donor level to the valence band. 相似文献
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粒径可控纳米CeO_2的微乳液法合成 总被引:1,自引:0,他引:1
以十六烷基三甲基溴化铵(CTAB)/正丁醇/正辛烷/硝酸铈(Ce(NO3)3)水溶液(氨水)所形成的反相微乳液体系合成CeO2前驱体,利用热重(TG)和X射线衍射(XRD)分析方法确定了得到纳米CeO2的适宜焙烧温度为550℃,CeO2前驱体经550℃焙烧后得到纳米CeO2.采用XRD、透射电镜(TEM)、紫外-可见(UV-Vis)分光光度计等表征手段分别对纳米CeO2的晶形、形貌、粒径及紫外吸收性质进行了表征,该纳米CeO2粒子具有立方晶型结构,分散性较好、粒径范围为5-18nm.考察了微乳液中正辛烷与正丁醇质量比、Ce(NO3)3浓度对纳米CeO2粒径的影响,结果表明:利用微乳液法,通过改变微乳液中正辛烷与正丁醇质量比、Ce(NO3)3浓度能够对纳米CeO2粒径进行有效控制;纳米CeO2的粒径均随着正辛烷与正丁醇质量比和Ce(NO3)3浓度的增大而减小.同时,对不同条件下制得的纳米CeO2的紫外吸收性质进行了考察. 相似文献
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本文以二氧化碳地下深部咸水层封存为背景,研究了在地质封存过程中二氧化碳水溶液通过天然岩心时发生矿化反应的过程。本文主要通过实验研究,利用核磁共振设备,对比了矿化反应前后,钙化岩心注入二氧化碳饱和水溶液后渗透率、孔隙率等基本参数的变化。发现在矿化反应过程中,岩心的渗透率和孔隙率都会不断增加,而入口及原大孔隙部分孔隙率增加尤为明显,发现矿化反应对渗透率的影响较大,在实际二氧化碳地质封存模拟时,需要考虑矿化反应对渗透率的影响。 相似文献