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Successful Nitrogen Doping of 1.3 GHz Single Cell Superconducting Radio-Frequency Cavities 下载免费PDF全文
A high intrinsic quality factor(Q_0) of a superconducting radio-frequency cavity is beneficial to reducing the operation costs of superconducting accelerators. Nitrogen doping(N-doping) has been demonstrated as a useful way to improve Q_0 of the superconducting cavity in recent years. N-doping researches with 1.3 GHz single cell cavities are carried out at Peking University and the preliminary results are promising. Our recipe is slightly different from other laboratories. After 250 μm polishing, high pressure rinsing and 3 h high temperature annealing, the cavities are nitrogen doped at 2.7–4.0 Pa for 20 min and then followed by 15 μm electropolishing. Vertical test results show that Q_0 of a 1.3 GHz single cell cavity made of large grain niobium has increased to 4 × 10~(10) at 2.0 K and medium gradient. 相似文献
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由于迁移率高、均匀性好、制备成本低等优势,铟镓锌氧化物薄膜晶体管(IGZO TFT)有望促成有源矩阵有机发光显示器件(AMOLED)的大规模量产。但是IGZO TFT存在阈值电压(VTH)漂移的问题,实用的AMOLED像素电路必须对VTH漂移进行补偿以实现较好的显示效果,而VTH的检测是AMOLED像素电路设计中的关键环节。本文系统研究了VTH检测方法,比较了放电法、充电法、偏置电流法补偿VTH的效果,研究了VTH检测时间和TFT寄生电容等参数的影响。研究结果表明:放电法不能精确地补偿负VTH漂移,充电法需要的VTH检测时间最长,偏置电流法能够达到的补偿精度最高。 相似文献
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