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Deposition of Cu seed layer film by supercritical fluid deposition for advanced interconnects
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The deposition of a Cu seed layer film is investigated by supercritical fluid deposition(SCFD) using H2 as a reducing agent for Bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper in supercritical CO2(scCO2).The effects of deposition temperature,precursor,and H2 concentration are investigated to optimize Cu deposition.Continuous metallic Cu films are deposited on Ru substrates at 190℃ when a 0.002 mol/L Cu precursor is introduced with 0.75 mol/L H2.A Cu precursor concentration higher than 0.002 mol/L is found to have negative effects on the surface qualities of Cu films.For a H2 concentration above 0.56 mol/L,the root-mean-square(RMS) roughness of a Cu film decreases as the H2 concentration increases.Finally,a 20-nm thick Cu film with a smooth surface,which is required as a seed layer in advanced interconnects,is successfully deposited at a high H2 concentration(0.75 mol/L). 相似文献
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基于纵向数据研究非参数模型y=f(t)+ε,其中f(·)为未知平滑函数,ε为零均值随机误差项.利用截断幂函数基对f(·)进行基函数展开近似,并且结合惩罚样条的方法构造关于基函数系数的惩罚修正二次推断函数.然后利用割线法迭代得到基函数系数估计的数值解,从而得到未知平滑函数的估计.理论证明,应用此方法所得到的基函数系数估计具有相合性和渐近正态性.最后通过数值方法得到了较好的拟合结果. 相似文献
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