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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
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We present the growth of GaN epilayer on Si (111)
substrate with a single AlGaN interlayer sandwiched between the GaN
epilayer and AlN buffer layer by using the metalorganic chemical
vapour deposition. The influence of the AlN buffer layer thickness
on structural properties of the GaN epilayer has been investigated
by scanning electron microscopy, atomic force microscopy, optical
microscopy and high-resolution x-ray diffraction. It is found that
an AlN buffer layer with the appropriate thickness plays an important
role in increasing compressive strain and improving crystal quality
during the growth of AlGaN interlayer, which can introduce a more
compressive strain into the subsequent grown GaN layer, and
reduce the crack density and threading dislocation density in GaN
film. 相似文献
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Microstructure and strain films using in-plane grazing analysis of GaN epitaxial incidence x-ray diffraction
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This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa. 相似文献
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研究了金属有机化学气相沉积设备生长条件对AlN 薄膜质量的影响. 应用Williamson-Hall方法测试并分析了不同氮化时间、AlN缓冲层生长时间、 载气流量生长参数对AlN薄膜的面内晶粒尺寸的影响. 实验结果表明, 随着氮化时间减小, 缓冲层生长时间增加, 载气流量减少, AlN薄膜的侧向生长和岛的合并能力增强, 面内晶粒尺寸增大, 从而晶体质量也变好.
关键词:
AlN
Williamson-Hall
面内晶粒尺寸 相似文献
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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition
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In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. 相似文献
8.
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well(MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency(EQE) of the solar cells increases in a low energy spectral range(λ 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths(λ 370 nm). 相似文献
9.
We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality. 相似文献
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