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The Ta/Si multilayers on (100) Si substrate have been studied over the annealing temper-ature range from 500 to 900℃ by X-ray diffraction and cross-section transmission electron microscopy. The periodicity of the multilayers becomes worse with increasing annealing tem-perature and disappears at 750℃. At 600℃, two kinds of modulation wavelength coexist because the size of several TaSi2 grains is larger than the contracted original modulation wavelength. The films are contracted after annealing. The largest contraction, at least 40nm decreasing in thickness, occurs at 600℃. When the annealing temperature is lower than 600℃, h-TaSi2 grains grow randomly and the growth is not affected by the substrate. At temperatures higher than 750℃, h-TaSi2 grows preferentially in [001] direction parallel to [100] axis of Si substrate. The appearance of texture depends on whether the atomic diffusion is short range or long range at the corresponding annealing temperature. 相似文献
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The GaxIn1-xP/GaAs heterostructures with different x values have been investigated by photoluminescence (PL), energy dispersive spectrum (EDS), and transmission electron microscopy (TEM). Experimental results suggested that the composition of epitaxial layers evidently affected the microstructure of the heterostructures. When x value was close to 0.5, the defects in the epitaxial layer decreased, and the lattice match between film and sub-strate approached optimum, Meanwhile, the heteroatructure provided a high luminescence efficiency. 相似文献
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The double-doped La2/3+4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3+/Mn^4+ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T^onset c for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the varlable-range hopping process dominates. For other samples, there is no or only weak phase separation above T^onset c. Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the "double-doping". 相似文献
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高温超导体的发现动摇了支配磁通动力学二十几年的Kim-Anderson模型.于是人们提出了新的涡旋玻璃态模型,集体钉扎模型和U~j对数关系模型来描述高温超导体的磁通动力学.其中,涡旋玻璃态模型已被人们广泛接受.Fe基超导体发现后,人们它行为十分类似于高温超导体.我们实验上仔细研究了FeSe0.5Te0.5单晶的V~I关系曲线,发现上述诸模型均不能很好的解释我们的实验结果,而张的反跳模型恰能很好的拟合实验结果.本文讨论了诸模型对高温超导体磁通动力学描述的适用性并给出合理的解释. 相似文献
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The GaxIn1-xP/GaAs heterostructures with different x values have been investigated by photoluminescence (PL), energy dispersive spectrum (EDS), and transmission electron microscopy (TEM). Experimental results suggested that the composition of epitaxial layers evidently affected the microstructure of the heterostructures. When x value was close to 0.5, the defects in the epitaxial layer decreased, and the lattice match between film and sub-strate approached optimum, Meanwhile, the heteroatructure provided a high luminescence efficiency. 相似文献
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利用透射电子显微镜(TEM)对有化合物生成(Pd2Ge和PdGe等)的Pd,Ge薄膜体系中的分形晶化行为进行了系统研究实验结果和分析表明:在各种退火温度条件下,Pd-Ge共蒸膜都难以发生分形晶化,Pd/a-Ge双层膜较a-Ge/Pd双层膜更容易导致分形结构的产生Z化合物Pd2Ge和PdGe的形成对薄膜中的分形晶化有明显的抑制作用,体系中能否出现分形结构,取决于非晶Ge的成核生长和Pd,Ge化学反应两种过程的相互竟争.
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