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研究了复合欧拉函数方程φ(φ(n-φ(φ(n))))=4,6的可解性问题,其中φ(n)为欧拉函数.利用初等数论内容及计算方法分别得到了两个方程的所有正整数解.求解方法简洁有效,避免繁琐的求解过程,方法可用以求解其他类似复合欧拉函数方程. 相似文献
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研究了三元变系数混合型欧拉函数方程φ(abc)=2φ(a)φ(b)+6φ(c)的可解性问题,其中φ(n)为欧拉函数.利用初等数论相关内容及计算方法,给出了方程所有共计95组正整数解.所提出的求解技巧可用以求解其他相似类型的混合型欧拉函数方程. 相似文献
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本文通过构造函数、巧妙变形等运算技巧,给出了三个国外数学竞赛试题的简单证明.问题一匈牙利—以色列2003年数学竞赛试题设x_1,x_2,…,x_n∈R~+,证明:(x_1~3)/(x_1~2+x_1x_2+x_2~2)+(x_2~3)/(x_2~2+x_2x_3+x_3~2)+…+(x_n~3)/(x_n~2+x_nx_1+x_1~2)≥(x_1+x_2+…+x_n)/3. 相似文献
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Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs 下载免费PDF全文
The two-dimensional models for symmetrical double-material double-gate(DM-DG) strained Si(s-Si) metal–oxide semiconductor field effect transistors(MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate(SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS. 相似文献
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