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By solving the 2D Poisson's equation, analytical models are proposed to calculate the surface potential and electric field distributions of lateral power devices with arbitrary vertical doping profiles. The vertical and the lateral breakdown voltages are formulized to quantify the breakdown characteristic in completely-depleted and partially-depleted cases. A new reduced surface field (RESURF) criterion which can be used in various drift doping profiles is further derived for obtaining the optimal trade-off between the breakdown voltage and the on-resistance. Based on these models and the numerical simulation, the electric field modulation mechanism and the breakdown characteristics of lateral power devices are investigated in detail for the uniform, linear, Gaussian, and some discrete doping profiles along the vertical direction in the drift region. Then, the mentioned vertical doping profiles of these devices with the same geometric parameters are optimized, and the results show that the optimal breakdown voltages and the effective drift doping concentrations of these devices are identical, which are equal to those of the uniform-doped device, respectively. The analytical results of these proposed models are in good agreement with the numerical results and the previous experimental results, confirming the validity of the models presented here.  相似文献   
2.
王棣华  花婷婷 《珠算》2010,(12):72-73
内部控制绝非大型企业的专属名词,中小企业也需要内控,当然,不可盲目效仿,而要量身打造适合本企业的内控体系。  相似文献   
3.
王棣华  花婷婷 《珠算》2010,(8):40-42
东方航空套期保值折戟沉沙,固然有公司经验、技巧不足的原因,但倘若当时市场拥有股指期货这样的做空对冲机制,或许企业会有更多选择。  相似文献   
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