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用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明,同Si、Ge、GaAs等半导体材料不同,ZnSe的X点导带底具有正的压力系数,但比г点的压力系数小,这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响,表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。 相似文献
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We study the energy levels of an electron (or hole) polaron in a parabolic quantum well structure,including the spatial dependence of the effective mass.We also consider the two-mode behaviour of longitudinal optical phonon modes of the ternary mixed crystals in the structure,in the calculation of the effect of the electron phonon interaction.We calculate the ground state,the first excited state and the transition energy of an electron (or hole) in the GaAs/AlxGa1-xAs parabolic quantum well structure.The numerical results show that the electron-phonon interaction obviously affects the energy levels of the electron (or hole),which are in agreement with experimental results. 相似文献
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On the binding energies of excitons in polar quantum well structures in a weak electric field 下载免费PDF全文
The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected. 相似文献
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We study the effects of electron-phonon interaction on the electron ground state in a symmetric triangular quantum well, and calculate the ground state energy of an electron in the GaAs/Al0.96Ga0.04As triangular quantum well including the effects of the interaction between electrons and confined LO phonons by using a modified Lee-Low-Pines variational method. The electron wavefunction in the triangular well is chosen as the Airy function. The numerical results are given and discussed. 相似文献
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The interface phonon-polaritons in quantum well systems consisting of polar ternary mixed crystals are investi-gated. The numerical results of the interface phonon-polariton frequencies in the GaAs/AlxGa1-xAs, ZnSxSe1-x/ZnS, and ZnxCd1-xSe/ ZnSe quantum well systems are obtained and discussed. It is shown that there are six branches of interface phonon-polariton modes distributed in three bulk phonon-polariton forbidden bands in the systems. The electric fields of interface phonon-polaritons are also presented and show the interface locality of the modes. The effects of the ’two-mode’ and ’one-mode’ behaviours of the ternary mixed crystals on the interface phonon-polariton modes are shown in the dispersion curves. 相似文献