排序方式: 共有32条查询结果,搜索用时 15 毫秒
1.
本文研究拟线性项与源项的竞争对具有强阻尼项的拟线性抛物方程解的影响.利用Galerkin方法给出局部解的存在性,结合势井方法和修改的能量泛函,在不同条件下证明整体解的存在性,并估计整体解的能量衰减.最后在初始能量为负或初始能量有一临界的正的下界,且时间t趋于无穷时,解的Lp范数将以指数形式增长. 相似文献
2.
The authors consider the Cauchy problem for the following nonlinear wave equationswhere x ∈ R3, t ≥ 0, ε > 0 is a small parameter, and obtain the sharp bounds for the lifespan of solution to (0.1). Specially, it is proved that there exist two constants C1 and C2, which are independent of ε, then the lifespan T(ε) satisfies the folowing inequalities 相似文献
3.
4.
研究了Davey-Stewartson系统(简记为D-S系统)粗糙爆破解的动力学性质.所谓粗糙爆破解即为正则性为H~s(s1)的爆破解,此时D-S系统粗糙解不再满足能量守恒率.利用I-方法与Profile分解理论,得到了D-S系统粗糙爆破解在H~s(R~2)(其中ss_0,且s_0≤(1+11~(1/2))/5≈0.8633)中的极限行为,包括L~2强极限的不存在性与L~2集中性质以及极限图景. 相似文献
5.
本文运用半群理论和Kato的方法,研究了MHD方程组在PL~n∩PL~p(1
相似文献
6.
7.
A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively. 相似文献
8.
该文研究带耗散项的线性和半线性波动方程外问题. 首先利用一个Sobolev型不等式得到了线性耗散波动方程在外区域上的整体能量衰减估计, 此结果用来证明非线性项为|u|p (2
+) 的半线性波动方程解的整体存在性. 为此, 该文主要研究N维(3≤ N≤7)外区域上球对称解的情形. 相似文献
9.
本文研究一类带对数阻尼项的对数型类波方程的柯西问题,考虑对数阻尼项对解存在性的影响.通过Fourier变换、Laplace变换及Young不等式建立了线性问题解的衰减估计.在恰当的工作空间中,利用整体迭代方法证明了解的整体存在唯一性;利用测试函数方法得到了解的有限时刻爆破. 相似文献
10.