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Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4 下载免费PDF全文
The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La2-xBaxCuO4 at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La1.48Nd0.4Sr0.12CuO4. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text. 相似文献
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提出了一种鲁棒性基准孔检测方法。通过显著性检测对图像进行预处理,获得显著图,利用Hough圆检测算法提取显著图中基准孔感兴趣区域;基于双阈值进行轮廓分割,并利用主成分分析提取基准孔像素级轮廓,然后使用Bazen方法提取基准孔亚像素轮廓;基于随机采样一致性(RANSAC)原理实现基准孔高精度定位。实验结果表明,该算法的拟合精度高,对真实基准孔的定位误差为0.027 mm,检测性能优良,对于反光、刀具痕迹、光照不均匀、带倒角螺纹孔、内嵌轮廓、遮挡等情况下的基准孔检测仍具有很好的鲁棒性。 相似文献
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测量了在O2中退火不同时间的Sm1.85Ce0.15CuO4单晶样品的热电势S与电阻率ρ的温度依赖关系.所有的样品电阻率高温下呈现线性温度依赖行为.未退火的样品在148K发生超导转变,而退火后的样品在低温下发生金属半导体相变,其超导电性消失,表明退火引起了载流子浓度下降,体系进入欠掺杂态.随着温度降低,所有的样品ST和ρT曲线在200K附近(T)都发生斜率的改变,可以用赝能隙现象解释.热电势S在低温下出现一个正的曳引峰,意味着载流子符号发生改变,由电子型转变为空穴型
关键词:
电子型超导体
热电势
赝能隙 相似文献
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引入非线性空间变换,用伪谱方法求解了一维原子在强激光场中的薛定谔方程,再利用B样条函数和傅立叶级数的线性组合构造原子未微扰的本征函数,计算了一维原子在强激光场中的阈上电离谱,其结果与分裂算符法得到的结果符合得很好. 相似文献
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A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (Ron.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in Ron.sp by 45.7% simultaneously. 相似文献
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