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PU大分子单体水溶液性质 总被引:2,自引:0,他引:2
双亲聚合物一般由亲水和亲油 2种链段构成 ,有嵌段型[1,2 ] 和接枝型[3 ] 2种 ,其中通过大分子单体法合成双亲接枝聚合物备受关注[4] 。如以亲水性大分子单体和亲油性小分子单体共聚 ,大分子单体构成共聚物主链上支链 ,具有较大活动性 ,亲水效能高。采用对氯甲基苯乙烯[5] 或甲基丙烯酰氯[6] 与聚氧化乙烯大分子的一端相反应 ,可得到亲水性大分子单体 ,但其分子量及结构变化有限。本文采用常规条件 ,合成了嵌段式水溶性聚氨酯大分子单体 ,其分子量较大 ,共聚接枝的支链较长。利用该大分子单体具有非离子高分子表面活性剂的性质 ,采用无皂乳… 相似文献
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A Triton X-100-4.0G-D (4.0G-D refers to a 4.0-generation dendrimer) was brought forward as a new phosphorescence labeling reagent. Two types of specific affinity adsorption (AA) reactions (direct method and sandwich method) were carried out between the labeling product of Triton X-100-4:0G-D-Wheat germ agglutinin (WGA) and alkaline phosphatase (ALP), the product of AA reaction preserved the good characteristics of room temperature phosphorescence (RTP) of 4.0G-D and △Ip of the product was proportional to the content of ALP. According to the fact stated above, a new method for the determination of trace ALP by affinity adsorption solid substrate-room temperature phosphorimetry (AA-SS-RTP) was established on the basis of WGA labeled with the Triton X-100-4.0G-D. The detection limits were 0.20 ag·spot^-1 (corresponding concentration: 5.0×10^-16 g·mL^-1, namely 5.0×10^-18 mol·L^-1) for a direct method and 0.14 ag·spot^-1 (corresponding concentration: 3.5×10^-16 g·mL^-1, namely 3.5×10^-18 mol·L^-1) for a sandwich method, respectively. For their high sensitivity, good repeatability and high accuracy, the direct method and sandwich method have been successfully appfied to determine the content of ALP in human serum, and the results were coincided with the clinical detection results of the enzyme-linked immunosorbent assay method by the Zhangzhou Hospital of Traditional Chinese Medicine. Meanwhile, the mechanism for the determination of trace ALP by AA-SS-RTP was discussed. 相似文献
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激光烧蚀-多接收电感耦合等离子体质谱测定铀颗粒物中铀全同位素比值 总被引:2,自引:0,他引:2
建立了铀颗粒物中铀全同位素比值的分析方法,采用双面胶带装载铀颗粒物样品,优化激光烧蚀-多接收电感耦合等离子体质谱的运行参数,用标准样品交叉法校正质量分馏和探测器检测效率,测定了粒径几十微米的铀标准物质CRM124-1、GBW04234和GBW04238中铀全同位素比值.本方法对铀颗粒物中235U/238U、234 U/235U和236 U/235U测量的相对实验标准不确定度分别小于0.050%,1.7%和1.8%,测量结果与参考值在不确定度范围内符合.研究表明,本方法可快速、准确、高精度地测定铀颗粒物中铀全同位素比值. 相似文献
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草酸钙结石形态的红外光谱分析 总被引:2,自引:1,他引:1
草酸钙结石主要是以一水草酸钙(COM)、二水草酸钙(COD)的形式存在。在解决缺少COD标样的难题后,将制备的COD样品与COM标样混合,然后采用红外光谱法对混合物进行分析研究,采用谱带比值法,确定了COD和COM在660和610 cm-1处与780和520 cm-1处的吸收度比值(R)与质量分数(w)的关系式,其线性回归方程分别为:R=11.95×10-3wCOD 0.873 61,r=0.983 63;R=4.74×10-3wCOD 0.886 52,r=0.992 44。同时为了减少压片、测定等因素引起的误差,采用零点交叉一阶导数法,测定在1 320 cm-1处吸收度一阶导数与COD质量分数(w)的关系式,其线性回归方程I=5.5×10-5w 9.2×10-5,r=0.996 60。线性良好。 相似文献
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星上电缆在航天器系统工程中起到了传递能量和信息的关键作用,并且其上天后具有不可修复性,这就决定了它在电性能检测方面必须做到高质量与高可靠。本文针对传统人工方式进行导通绝缘测试时工作强度大、检测效率低下和可信度低等缺点,设计并开发了一种星上电缆自动导通绝缘测试仪。该仪器基于模块化设计的思想采用中央控制器对各个模块单元进行控制来分别实现测试通道自动切换、测试电压的供给、星上电缆导通绝缘电阻的数据采集、通讯、存储和显示。实践结果表明,星上电缆自动导通绝缘测试仪一方面可以提高电缆导通绝缘测试的可靠性,增强质量控制;另一方面,可以提高效率,节省生产周期,降低劳动强度。 相似文献
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采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In0.82Ga0.18As材料。研究缓冲层的生长温度对In0.82Ga0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In0.82Ga0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。 相似文献
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Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating 下载免费PDF全文
A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth. 相似文献
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利用高分辨X射线衍射(HRXRD)与拉曼散射光谱(Raman scattering spectra)研究了氮化处理与低温AlN缓冲层对低压金属有机化学气相沉积(LP-MOCVD)在r面蓝宝石衬底上外延的a面GaN薄膜中的残余应变的影响。实验结果表明:与氮化处理后生长的a-GaN相比,使用低温AlN缓冲层后生长的a-GaN具有较小的摇摆曲线的半高宽和较低的残余应变,而且其结构各向异性和残余应变各向异性也均有一定程度的降低。因此,与氮化处理相比,低温AlN缓冲层更有利于a-GaN的生长。 相似文献
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