Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.     

小直径单圈与双圈图的Mostar指标与不规则度的差（英文）

任给一个连通图,高芳等人首先引进了G的一个不变量?M(G)=M_o(G)-irr(G),并提出一个问题:怎样确定所有含n个顶点的连通图G的?M(G)的极值,其中M_o(G)和irr(G)分别表示G的Mostar指标和不规则度.本文针对这个问题,刻画所有直径为3的单圈图和双圈图G的?M(G)的上界,并给出它们的极图.