Synthesis and Crystal Structure of a Novel Zinc Phosphonate Compound： [Zn（phen）（m-OOCC6H4PO3H）]

A novel zinc（H） metal phosphonate compound [Zn（phen）（m-OOCC6H4PO3H）] 1 （phen = phenanthroline） has been synthesized under hydrothermal conditions. Single-crystal X-ray structure analysis reveals that compound 1 belongs to the triclinic system, space group P1 with a = 9.3356（19）, b = 10.203（2）,c = 10.743（2）A,α = 76.3030（70）, β= 69.2317（51）, y = 84.3833（74）°,V = 929.4（3） ,A3, Z = 2, C2OH15N2O5PZn, Mr = 459.68, Dc = 1.643 g/cm^3,μ= 1.444, mm^-1, F（000） = 468, the final R = 0.0330 and wR = 0.0848. In the structure, the central ion Zn（H） is five-coordinated, linking three O atoms with one from carboxyl and the other two from phosphonyl group. The remained two coordinate sites were occupied by two N atoms from one phen molecule to form the asymmetric unit. Then every two adjacent asymmetric units are bridged by the O atoms from phosphonate group and carboxyl to give rise to a 1D chain along the b axis. These chains are constructed by weak π-π stacking interactions and C-H…π interactions to generate a 3D supramolecular framework.     

基于EEMD-MRA方法的LIBS信号处理研究

LIBS技术优点众多,但由于光谱噪声干扰和基体效应等因素,影响了分析的准确度^[1]; EEMD方法能清晰的将LIBS信号中的不同特征成分自适应的分解开来。MRA方法能够补偿元素信号之间的互干扰,可进一步提高LIBS信号的准确性。通过自行搭建的测试系统获得了标准样品的原始信号,使用EEMD-MRA方法进行处理后,元素浓度曲线的决定系数R²得到了极大的提高,大大的提高数据的准确性,为LIBS信号的处理提供了一种全新的方式。     

第一性原理对SinMg(n=1-12)团簇结构、稳定性与电子性质的研究

运用密度泛函理论(DFT)的杂化密度泛函B3LYP方法,在6-311G基组水平上对 团簇进行了构型优化、频率分析与电子性质计算.同时讨论了团簇的平均结合能、能级间隙、二阶能量差分、自然电子布居、极化率.研究结果表明： 团簇的基态绝大多数为立体结构. 时,体系的基态为自旋三重度, 时,则为单重态.镁原子的掺入使得主团簇的电子性质发生了明显的变化,掺杂使体系的平均结合能降低,能隙减小,化学硬度减小,电子亲和能增大.电子总是从 原子向 原子转移.团簇中原子之间的成键相互作用随n的增大 而增强,团簇的电子结构随n的增大而趋于紧凑.     

淹没在历史中的中国“爱迪生”——发明家黄履庄

介绍了我国发明家黄履庄的技术发明．     

Improvement in a-plane GaN crystalline quality using wet etching method

Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.     

具有异质结的富勒烯C_(60)/酞菁纳米复合材料的可见光响应光催化应用（英文）

通过再沉淀法制备了富勒烯C60/酞菁的复合纳米微粒。这种复合纳米微粒由于C60分子和酞菁分子间的π-π相互作用而具有电子给体-受体(donor-acceptor)结构,而且这种微粒的尺寸可通过选择再沉淀过程中使用的溶剂来进行控制。此外,这种微粒与Nafion结合后,表现出去除三甲胺的光催化性能,而且其光催化活性优于C60微粒/Nafion或酞菁微粒/Nafion复合物。该结果表明电子给体-受体结构可通过促进有机半导体的电荷分离来增强光催化的性能,从而揭示了一种新颖的基于电子给体-受体结构的有机光催化剂。     

大口径氘化磷酸二氢钾晶体离线亚纳秒激光预处理技术

大口径氘化磷酸二氢钾(DKDP)晶体抗激光损伤性能偏低严重地制约着大型高功率激光装置输出水平.本研究利用离线亚纳秒激光预处理技术有效地提升了大口径DKDP晶体抗激光损伤性能.实际使用情况表明,采用离线亚纳秒激光预处理后,DKDP晶体在9 J/cm²激光通量辐照下的表面平均损伤密度得到大幅下降,由未处理前的5.02 pp/cm²(1pp表示1个百分点)降至0.55 pp/cm²,降幅为一个数量级.同时,激光预处理对晶体损伤尺寸具有一定的抑制作用,预处理后晶体损伤点尺寸分布曲线向尺寸减小的方向平移,尺寸分布峰值由预处理前的25μm降至预处理后的18—20μm.     

Quantum phase transitions in CePdAl probed by ultrasonic and thermoelectric measurements

CePdAl has been recently recognized as a frustrated antiferromagnetic heavy-fermion compound with a pressure- or field-tuned, extended quantum critical phase at zero temperature. Identifying characteristic signatures of the emerging quantum critical phase, which are expected to be distinct from those near a quantum critical point, remains challenging. In this work, by performing ultrasonic and thermoelectric measurements down to very low temperatures in a ³He-⁴He dilution refrigerator in the presence of magnetic field, we are able to obtain some crucial thermodynamic and thermal transport features of the quantum critical phase, including a frustration-related elastic softening detected by ultrasound and a Fermi-surface change probed by thermoelectric effect.     

Identification and separation of local and nonlocal optical nonlinear refraction effects: theory and experiment

Understanding the nonlinear optical effect of novel materials plays a crucial role in the fields of photonics and optoelectronics. Herein, we theoretically and experimentally investigate the simultaneous presence of third-order locally refractive nonlinearity and thermally induced nonlocal nonlinearity saturation. We present analytical expressions for the closed-aperture Z-scan trace and the number of spatial self-phase modulation(SSPM) rings,which allows one to unambiguously and conveniently separate the contributions of local and nonlocal nonlinear refraction in the case that both effects occur simultaneously. As a test, we study both the local and thermally induced nonlocal nonlinear refraction in fullerene/toluene solution by performing continuous-wave Z-scan and SSPM measurements at two different wavelengths. This work enriches the understanding of the physical mechanism of the optical nonlinear refraction effect in solution dispersions of nanomaterials, which can be exploited for nonlinear photonic devices.     

Pressure effect in the Kondo semimetal CeRu_4Sn_6 with nontrivial topology

Kondo semimetal CeRu_4Sn_6 is attracting renewed attention due to the theoretically predicted nontrivial topology in its electronic band structure. We report hydrostatic and chemical pressure effects on the transport properties of single-and poly-crystalline samples. The electrical resistivity ρ(T) is gradually enhanced by applying pressure over a wide temperature range from room temperature down to 25 mK. Two thermal activation gaps estimated from high-and low-temperature windows are found to increase with pressure. A flat ρ(T) observed at the lowest temperatures below 300 mK appears to be robust against both pressure and field. This feature as well as the increase of the energy gaps calls for more intensive investigations with respect to electron correlations and band topology.