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使用对Zn2N3:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23 μB—0.61 μB.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好.
关键词:
磁性半导体
受主掺杂
空穴媒介的铁磁性 相似文献
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通过柔性配体1, 3-丙二胺缩邻香兰素(H2L)与和La(NO3)3·6H2O反应, 合成了1个由2个H2L桥连的双核稀土配合物[La2(NO3)6(H2L)2] ·CH2Cl2 (1), 该配合物与(NH4)(PF6)继续反应生成了1个由2个NO3-离子桥连的双核配合物[La2(NO3)2(H2L)4] (PF6)4·4H2O·2CH2Cl2 (2), X-射线单晶衍射分析确定了2个配合物的晶体结构。配合物1和2为结构完全不同的2个双核结构, 因抗衡阴离子PF6-有去阴离子的作用, 配合物1中的NO3-离子被配体取代, 导致配合物1的结构翻转, 形成了1个新颖的双核结构2。 相似文献
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本文针对低少子寿命铸造多晶硅片进行试验, 通过一种将多温度梯度磷扩散吸杂工艺与低温退火工艺结合的新型低温退火吸杂工艺, 去除低少子寿命多晶硅片中影响其电性能的Fe杂质及部分晶体缺陷, 提高低少子寿命多晶硅所生产的太阳电池各项电性能. 通过低温退火磷扩散吸杂工艺与其他磷扩散吸杂工艺的比较, 证明了低温退火吸杂工艺具有更好的磷吸杂和修复晶体缺陷的作用. IV-measurement发现经过低温退火工艺处理后的低少子寿命多晶硅, 制备的太阳电池光电转换效率比其他实验组高0.2%, 表明该工艺能有效地提高低少子寿命多晶硅太阳电池各项电性能参数及电池质量. 本研究结果表明新型低温退火磷吸杂工艺可将低少子寿命硅片应用于大规模太阳电池生产中, 提高铸造多晶硅材料在太阳能领域的利用率, 节约铸造多晶硅的生产成本.
关键词:
低温退火
磷吸杂
低少子寿命多晶硅
太阳电池 相似文献
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采用固相反应法,制备了不同成分的稀释磁性半导体Sn1-xMnxO 2(x=002,004,006).利用x射线衍射和傅里叶变换红外光谱法证明 了锰均匀地掺杂到二氧化锡中.在室温下研究了掺锰二氧化锡基稀释半导体的磁性,发现它具有明显的铁磁性 ,同时对磁性的强弱与锰的含量和烧结温度的关系作了研究.
关键词:
稀释磁性半导体
掺杂
烧结
铁磁性
1-xMnx O2')" href="#">Sn1-xMnx O2 相似文献
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Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films 下载免费PDF全文
This paper reports that the high-quality Co-doped ZnO
single crystalline films have been grown on $a$-plane sapphire
substrates by using molecular-beam epitaxy. The as-grown films show
high resistivity and non-ferromagnetism at room temperature, while
they become good conductive and ferromagnetic after annealing in the
reducing atmosphere either in the presence or absence of Zn vapour.
The x-ray absorption studies indicate that all Co ions in these
samples actually substituted into the ZnO lattice without formatting
any detectable secondary phase. Compared with weak ferromagnetism
(0.16~$\mu _{\rm B}$/Co$^{2 + })$ in the Zn6110M, 7550P, 7280E, 7870D http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/056101 https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111756 Co-doped ZnO, diluted magnetic semiconductors, x-ray
absorption fine structure, single crystalline thin films Project partially supported by
National Science Foundation of China (Grant No.~10804017), National
Science Foundation of Jiangsu Province of China (Grant
No.~BK2007118), Research Fund for the Doctoral Program of Higher
Education of China (Grant No.~20070286037), Cyanine-Project
Foundation of Jiangsu Province of China (Grant No.~1107020060),
Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu
Province of China (Grant No.~1107020070) and New Century Excellent
Talents in University (NCET-05-0452). This paper reports that the high-quality Co-doped ZnO
single crystalline films have been grown on $a$-plane sapphire
substrates by using molecular-beam epitaxy. The as-grown films show
high resistivity and non-ferromagnetism at room temperature, while
they become good conductive and ferromagnetic after annealing in the
reducing atmosphere either in the presence or absence of Zn vapour.
The x-ray absorption studies indicate that all Co ions in these
samples actually substituted into the ZnO lattice without formatting
any detectable secondary phase. Compared with weak ferromagnetism
(0.16~$\mu _{\rm B}$/Co$^{2 + })$ in the Zn$_{0.95}$Co$_{0.05}$O
single crystalline film with reducing annealing in the absence of Zn
vapour, the films annealed in the reducing atmosphere with Zn vapour
are found to have much stronger ferromagnetism (0.65~$\mu _{\rm
B}$/Co$^{2 + })$ at room temperature. This experimental studies
clearly indicate that Zn interstitials are more effective than
oxygen vacancies to activate the high-temperature ferromagnetism in
Co-doped ZnO films, and the corresponding ferromagnetic mechanism is
discussed. Co-doped;ZnO;diluted;magnetic;semiconductors;x-ray;absorption;fine;structure;single;crystalline;thin;films This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy.The as-grown films show high resistivity and non-ferromagnetism at room temperature,while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour.The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase.Compared with weak ferromagnetism(0.16 μB/Co2+) in the Zn0.95Co0.05O single crystalline film with reducing annealing in the absence of Zn vapour,the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism(0.65 μB/Co2+) at room temperature.This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films,and the corresponding ferromagnetic mechanism is discussed. 相似文献