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1.
Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy 总被引:1,自引:0,他引:1 下载免费PDF全文
Phase change memory (PCM) cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state (higher resistance state) to the crystalline state (lower resistance state). The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low (only several μA). An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad(Si), which makes it attractive for space-based applications. 相似文献
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We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one. 相似文献
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生物特异性功能高分子 总被引:1,自引:0,他引:1
模仿天然生物活性高分子关键作用点的化学组成,在高分子链上接上各种官能团或化学残基,制备具有与该天然高分子相似生物活性的高分子,即生物特异性功能高分子。本文主要介绍拟肝素高分子和似粘连 蛋白高分子两种生物特异性功能高分子。 相似文献
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用AM1、 PM3及INDO系列方法研究了C 相似文献
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Reactive Ion Etching as Cleaning Method Post Chemical Mechanical Polishing for Phase Change Memory Device 下载免费PDF全文
In order to improve nano-scale phase change memory performance, a super-clean interface should be obtained after chemical mechanical polishing (CMP) of Ge2Sb2Te5 phase change films. We use reactive ion etching (RIE) as the cleaning method. The cleaning effect is analysed by scanning electron microscopy and an energy dispersive spectrometer. The results show that particle residue on the surface has been removed. Meanwhile, Ge2Sb2Te5 material stoichiometric content ratios are unchanged. After the top electrode is deposited, currentvoltage characteristics test demonstrates that the set threshold voltage is reduced from 13 V to 2.7V and the threshold current from 0.1 mA to 0.025 mA. Furthermore, we analyse the RIE cleaning principle and compare it with the ultrasonic method. 相似文献
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用TREF方法分离聚烯烃共混物 总被引:1,自引:0,他引:1
用TREF方法分离聚烯烃共混物徐君庭,封麟先,杨士林(浙江大学高分子科学与工程学系,杭州,310027)关键词升温淋洗分级,聚烯烃,共混物升温淋洗分级(TREF)方法是80年代发展起来的,它按结晶度将聚合物分级[1],目前主要用于聚烯烃的分级[2,3... 相似文献