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用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比Xc为45%—50%)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着Xc的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。
关键词: 相似文献
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研究了掺杂纳米硅薄膜(nc∶Si∶H)中的电子自旋共振(ESR)及与之相关的缺陷态.样品是用等离子体增强化学气相沉积方法制成,为两相结构,即纳米晶粒镶嵌于非晶本体之中.对掺磷的nc-Si∶H样品,测量出其ESR信号的g值为1.9990—1.9991,线宽ΔHpp为(40—42)×10-4T,ESR密度Nss为1017cm-3数量级.对掺硼的nc-Si∶H样品,其ESR信号的g值为2.0076—2.0078,ΔH关键词:
纳米硅薄膜
微结构
电子自旋共振 相似文献
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Photoluminescence (PL) at low temperature is reported for nc-Si:H films grown by PECVD. A characteristic luminescence peak was observed in the wavelength range of 1.1-1.2μm. The temperature dependence of PL has been studied in the temperature range of 4.2-180 K. The PL mechanism of nc-Si:H films is discussed. The emission peak at 1.1-1.2 μm is attributed to the interface atoms between grains, and the emission peak around 0.9μm is due to a little amount of amorphous component. 相似文献
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DEPOSITION OF HIGH QUALITY AMORPHOUS SILICON FILMS WITH STRONG HYDROGEN DILUTED SILANE AS REACTANT GAS SOURCE
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By using strongly hydrogen diluted silane as a reactant gas source [C(=SiH4/(SiH4+H2))<5%] in a conventional diode PECVD system, we have deposited high quality a-Si:H films which exhibit almost no Steable-Wronski (S-W) effect, The [H] radical in rf plasma erodes the growing surface and eliminates the weak Si-Si bonds, thus re-ducing the density of metastable defects of a-Si:H films and causing the amorphous network to be more perfect. Our results show that as C value decreases from 5.4 % to 0.8 %, the peak location of TO mode in Raman spectra changes from 480 to 500 cm-1, the average distortion of bond angles Δθ, which is calculated from the width of half full height of TO peaks, reduces from 9.0° to 3.8°. The hydrogen content CH of the samples which show almost no S-W effect is less than 10at%. 相似文献