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基于电荷控制原理建立了辐射感生AlmGa1-mN势垒层应力弛豫对AlmGa1-mN/GaN HEMTs器件电学特性影响的解析模型,并进行了仿真分析.结果表明,对于高Al组分HEMTs器件,AlmGa1-mN势垒层中辐射感生的应力弛豫影响更为显著.辐射感生应力弛豫不但导致2DEG下降和阈值电压正向漂移,而且能够引起漏极输出电流的明显下降.辐射感生应力弛豫是赝配AlmGa1-mN/GaN HEMTs辐射损伤的重要机理之一.
关键词:
mGa1-mN/GaN')" href="#">AlmGa1-mN/GaN
HEMT
辐射损伤
应力弛豫 相似文献
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利用电子顺磁共振(EPR)技术测量了(100)晶向硅衬底材料上制作的MOS电容在电子和质子辐照前后缺陷电子顺磁(EPR)吸收谱,对比了电子和质子辐照前后缺陷顺磁中心浓度的变化。结果表明,辐照前后带有单个未成对自旋电子的Pb0中心浓度未发生明显变化,电子与质子辐照均产生了新的中性体缺陷,电子辐照后观察到Pb1中心的出现并随辐照注量增大,质子辐照后则未观察这一现象,当质子辐昭到10^14p/cm^2时,引起部分体缺陷顺磁中心的消失,电子辐照后,产生的体缺陷顺磁中心浓度则随辐照注量增大,表明电子与质子辐照作用机制的差异,质子辐照中位移效应和H^ 的存在最可能是造成晶格缺陷消失和顺磁吸收消失的主要原因。 相似文献
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SiC/AlN上外延GaN薄膜的黄带发光与晶体缺陷的关系 总被引:1,自引:7,他引:1
利用室温光致发光(PL)技术研究了在6HSiC(0001)上用金属有机物化学汽相沉积(MOCVD)外延生长的GaN薄膜“黄带”发光(YL)特点,与扫描电子显微镜(SEM)、X射线衍射(XRD)技术得到的GaN薄膜的表面形貌质量和内部结晶质量的结果相对照,表明“YL”发光强度与GaN薄膜的扩展缺陷多少直接相对应通过二次离子质谱(SIMS)技术获取的GaN薄膜中Ga元素深度分布揭示出镓空位(VGa)最可能是“YL”发光的微观来源分析认为,虽然宏观扩展缺陷(丝状缺陷、螺形位错等)和微观点缺陷VGa及其与杂质的络合物(complexes)都表现出与“YL”发射密切相关,但VGa及其与杂质的络合物更可能是“YL”发射的根本微观来源室温下获得的样品“YL”发射强度和光谱精细结构可用于分析GaN薄膜缺陷和晶体质量. 相似文献
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) 下载免费PDF全文
Using depletion approximation theory and introducing acceptor
defects which can characterize radiation induced deep-level defects
in AlGaN/GaN heterostructures, we set up a radiation damage model of
AlGaN/GaN high electron mobility transistor (HEMT) to separately
simulate the effects of several main radiation damage mechanisms and
the complete radiation damage effect simultaneously considering the
degradation in mobility. Our calculated results, consistent with the experimental results,
indicate that thin AlGaN barrier
layer, high Al content and high doping concentration are favourable
for restraining the shifts of threshold voltage in the AlGaN/GaN
HEMT; when the acceptor concentration induced is less than
1014cm-3, the shifts in threshold voltage are not
obvious; only when the acceptor concentration induced is higher than
1016cm-3, will the shifts of threshold voltage
remarkably increase; the increase of threshold voltage, resulting
from radiation induced acceptor, mainly contributes to the
degradation in drain saturation current of the current--voltage
(I--V) characteristic, but has no effect on the transconductance
in the saturation area. 相似文献
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