Moiré superlattice modulations in single-unit-cell FeTe films grown on NbSe2 single crystals

Interface can be a fertile ground for exotic quantum states, including topological superconductivity, Majorana mode, fractal quantum Hall effect, unconventional superconductivity, Mott insulator, etc. Here we grow single-unit-cell (1UC) FeTe film on NbSe₂ single crystal by molecular beam epitaxy (MBE) and investigate the film in-situ with a home-made cryogenic scanning tunneling microscopy (STM) and non-contact atomic force microscopy (AFM) combined system. We find different stripe-like superlattice modulations on grown FeTe film with different misorientation angles with respect to NbSe₂ substrate. We show that these stripe-like superlattice modulations can be understood as moiré pattern forming between FeTe film and NbSe₂ substrate. Our results indicate that the interface between FeTe and NbSe₂ is atomically sharp. By STM-AFM combined measurement, we suggest that the moiré superlattice modulations have an electronic origin when the misorientation angle is relatively small (≤ 3°) and have structural relaxation when the misorientation angle is relatively large (≥ 10°).     

Experimental Observations Indicating the Topological Nature of the Edge States on HfTe_5

The topological edge states of two-dimensional topological insulators with large energy gaps furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides X_(Te5)X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators, and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low-temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ～80 meV near the Fermi level on the surface monolayer of HfTe5 and that such an insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2 D nontrivial bulk properties.     

独立学院中《程控交换原理》课程实践教学新模式研究

针对"独立学院"这一高等教育新型办学模式的需要,对专业基础课《程控交换原理》进行了实践教学改革.改革取得了明显的成效,通过实训项目学生的综合实践能力得到培养,就业竞争力得到了提升.     

单层FeSe薄膜/氧化物界面高温超导

单层FeSe/SrTiO₃界面增强超导的发现为理解高温超导机理提供了一个新的途径,也为实现新的高温超导体开拓了新思路.本文通过在SrTiO₃（001）表面高温沉积Mg进而沉积单层FeSe薄膜,制备出了FeSe/MgO双层/SrTiO₃异质结.利用扫描隧道显微镜研究了异质结的电学及超导特性,观测到约14–15 meV的超导能隙,比体相FeSe超导能隙值增大了5–6倍,与K掺杂双层FeSe/SrTiO₃的超导能隙值相当.这一结果可理解为能带弯曲造成的界面电荷转移和界面处电声耦合共同作用导致的超导增强.FeSe/MgO界面是继FeSe/TiO₂之后的一个新界面超导体系,为研究界面高温超导机理提供了新载体.