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Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
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The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic(IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors. 相似文献
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采用磁过滤阴极脉冲真空弧沉积技术(pulsed filtered cathodic vacuum arc deposition,PFCVAD),以Si(100)单晶片为衬底,在衬底温度400℃、氧气压力4×10-2Pa、靶负压400 V的条件下制备了具有c轴取向的ZnO薄膜。采用原子力显微镜(AFM)和X射线衍射仪(XRD)研究了退火温度对ZnO薄膜 相似文献
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