聚丙烯纤维辐射接枝进展

本文对聚丙烯纤维的辐射接枝方法、特征和机理、以及其研究进展和表征进行了扼要综述。     

原子吸收无火焰钽舟法测定岩石中痕量镱

原子吸收无火焰钽舟法测定岩石样品中痕量镱,除铝、钠、硅、铁、钙以外其它元素不干扰测定。样品分解后,经PMBP萃取分离用本法测定获得了良好结果。该法灵敏度为6×10~(-12)克/1％吸收。 (一)仪器与主要试剂 1.以QR-50型分光光度计为主体组装的原子吸收分光光度计。 2.混合指示剂;溴甲酚绿及甲基红各0.2％乙醇溶液以3∶1体积混合。     

聚合物电流变体

本文概述了电流变体的发展概况，电流变机理、电流变效应的影响因素及聚合物电流变体的研究现状，并介绍了电流变化的组成春在机械制造、自动控制等领域的应用前景。     

基于关联规则和技术功效矩阵的企业技术创新机会发现和辅助决策方法

为助力科技型创新企业准确且快速地从外部捕获创新技术机会, 提出一种企业技术机会发现和辅助决策方法. 首先, 挖掘领域内的技术热点、技术重点和有潜力的技术作为领域技术创新机会. 然后, 通过关联规则分析领域技术机会和企业已有技术之间的相关性, 进一步结合技术掌握度和新颖度, 识别更适合企业的技术创新机会. 最后, 创新性地采用Sen-BERT语言模型和K-means聚类方法构建技术功效矩阵, 辅助企业从功能需求的角度进行技术创新决策. 以电动汽车领域为例验证了该方法的可行性.     

Result of search for low velocity exotic particles

The L3＋C experiment, taking advantage of the L3 muon magnetic spectrometer, measured the spatial tracks of charged cosmic ray particles to obtain rigidity as well as velocity. One possible low velocity exotic particle is observed. The existing uncertainties are discussed, and the flux upper limit of the low velocity exotic particles from this observation is deduced based on the assumption of a null observation. The result is 6.2×10^-10 cm^-2·s^-1·sr^-1 at 90% confidence level in the velocity range from 0.04c to 0.5c.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

Ca0.8-2x(YbxTb0.1Na0.1+x)2xWO4近红外下转换荧光粉水热合成及发光性质

一种在近红外光谱(NIR)区域高效的量子剪裁现象已在Ca0.8-2x(Ybx Tb0.1Na0.1+x)2x WO4(x=0～0.2)荧光粉中得到证实,该量子剪裁通过吸收紫外线光子发射近红外光子,能量传递包括两个协同过程,分别是WO42-基团到Yb3+离子和WO42-基团到Tb3+离子再到Yb3+离子,Yb3+离子的掺杂浓度对荧光粉在可见光和近红外光谱的发光,荧光寿命和量子效率的影响已进行了详细的研究。经计算,量子效率最大达到135.7%。铽与镱共掺钨酸钙的近红外量子剪裁,通过吸收太阳光谱的1个紫外光子到2个1 000 nm光子(2倍光子数增加)的下转化机制实现高效率硅太阳能电池的途径。     

Study on the approximative formula for the far-field of a Gaussian beam under circular aperture diffraction and its divergence

The approximative formula for the far-field diffraction of a Gaussian beam through a circular aperture is obtained by using the superposition of Gaussian beams instead of the aperture function, and the explicit expression for calculating the beam divergence is also gained. Using the formula, the influences of the aberrations on the far-field wavefront and the beam's divergence are researched, and the results show that the large aberrations badly affect the far-field wavefront and the divergence. It is suggested that the aberrations and the diffractions should be avoided when designing the transmitter.     

光响应“线性-超支化”超分子嵌段共聚物的制备及其对金表面的可逆亲疏水修饰

报道了一类新型的α-ωn型"线性-超支化"超分子嵌段共聚物.分别通过可控阴离子开环多支化聚合方法(ROMBP)和可逆加成-断裂链转移聚合方法(RAFT)合成了含有一个β-环糊精基团的亲水超支化缩水甘油醚(CD-g-HPG)和含有一个偶氮苯基团的疏水线性聚甲基丙烯酸甲酯(PMMA-AZO).两者可以通过β-环糊精和偶氮苯基团之间的主客体识别作用形成两亲性线性-超支化超分子嵌段共聚物PMMA-b-HPG.由于线性PMMA-AZO残留有RAFT聚合时链转移剂中的三硫代酯结构,超分子聚合物PMMA-b-HPG可以通过三硫代酯与金形成的硫-金键(S-Au)对金表面进行修饰形成自组装单分子层(SAM).修饰后的金表面呈现出光控的可逆亲疏水性能.在紫外光下,由于β-环糊精/偶氮苯之间的主客体识别作用被破坏,亲水的CD-g-HPG从表面脱离,表面变为疏水;在可见光下,如果重新将金片浸泡在CD-g-HPG溶液中,金表面的亲水性可以恢复.