Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

甲磺酸多沙唑嗪的合成

甲磺酸多沙唑嗪(doxazosin mesylate,Ⅰ)的化学名为1-(4-氨基-6,7-二甲氧基-2-喹唑啉基)-4-(1,4-苯骈二恶烷-2-甲酰基)哌嗪甲磺酸盐,是一种新型的高选择性α1受体阻滞剂[1],半衰期长,且有明显的降压和降脂作用,同时对单纯性前列腺增生引起的排尿困难具有良好的作用.目前已成为国内外治疗轻中度高血压的一线药物[2,3,4].     

脉动流方柱绕流特性研究

本文数值模拟雷诺数Re=100的条件下,脉动流振幅和频率分别为0.2≤A≤0.8和0≤f_P≤20 Hz时方柱绕流特性.通过数值计算得到方柱绕流的升、阻力系数,涡脱频率及尾涡特性,且稳定流下计算结果与文献结果一致。研究结果表明脉动流是一种有效的主动流动控制方法;在脉动流频率f_P为1.2~2.6自然涡脱频率f_(sn)时,旋涡脱落频率存在"锁定"现象;在锁定范围内,尾涡形成区域变短,时均阻力系数显著增大,且在脉动流频率等于两倍频率时,时均阻力系数达到峰值;随着振幅的增大,频率"锁定"范围增大。     

低温油封冷却器折流板开孔性能机理研究

针对管壳式换热器折流板背部存在流动死区的问题,以低温油封冷却器为研究对象,采用计算流体动力学技术对低温油封冷却器折流板开孔后的整体性能进行机理研究.研究结果表明:折流板背部存在大量的旋涡是导致流动死区的直接原因,折流板开孔后能够形成垂直于折流板的射流,对流动死区有明显改善作用。折流板开孔后,壳程压降有较大的降幅,同时传热系数也有降低,但降低幅度远远小于降低幅度。在等换热面积和等压降情况下,折流板开孔冷却器传热系数可以提高10%.     

蜂毒肽与二元脂膜相互作用过程的单分子运动行为

蜂毒肽等抗菌肽可通过破坏细菌的细胞膜而直接杀灭细菌,因此它的杀菌功能具有高效、广谱和不易产生耐药性等特点,并被认为有望能从根本上解决目前正严重威胁人类健康的抗生素耐药性问题.然而,抗菌肽通过增强细胞膜的通透性来实现杀菌的分子机制至今尚不清楚.本文结合单分子荧光追踪技术和分子动力学模拟,从单分子运动的角度对蜂毒肽与二元脂质细胞膜的界面相互作用过程进行了研究.结果表明,相较于其他大多数脂分子而言、部分脂分子在膜内的扩散速率会由于蜂毒肽的吸附、聚集、插膜成孔等扰动行为发生显著降低;而蜂毒肽倾向于作用在多组分脂膜相畴的边界处,干扰并降低脂膜相分离的程度,进而降低相边界对脂质分子扩散运动的限制.本工作阐明了蜂毒肽的膜作用活性对脂分子运动行为和脂膜相行为的影响、以及三者之间的关联.这些结果对于从单分子运动行为的角度来探索抗菌肽生物活性的分子机制和开发新型抗菌药物具有重要的指导意义.     

2′,5′-寡核苷酸C_(2′P_5′)C_(2′P_5′)A的合成

近年来发现用干扰素处理过的细胞胞浆提取物和双链RNA、ATP一起培养,可以生成一个低分子量的蛋白合成抑制剂,即5′-三磷酸-三聚2′,5′-腺苷酸(Ⅰ)。由于(Ⅰ)具有天然核酸中不存在的2′,5′-磷酸酯链以及它的抗病毒活性,因此引起不少化学家的兴趣,已有不少文章报导了(Ⅰ)及其类似物的合成,同时也发现不含三磷酸的三聚2′,5′-腺苷酸(Ⅱ)也同样具有活性。为了进一步研究(Ⅰ)的结构与活性关系,本文报导了用胞嘧啶碱基代替腺嘌呤碱基的(Ⅱ)的类似物C_(2′P5′)C_(2′P5′)A(Ⅲ)的合成。     

Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application

We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.     

(Bi,Pb)_4Ca_3Sr_3Cu_4O_y系统的超导电性与相结构的关联

本文研究了两组单相样品Bi,PbCa_3Sr_3Cu_4O_y和Bi_4Ca_3sr_3Cu_4O_y的物相与超导电性之间的关系.发现两组样品同属4334相材料,但它们的超导电性存在很大差异.引起这种差别的原因可能来自于晶胞内部的原子排列,氧缺位的数目及其分布,以及电子结构等精细结构的不同.     

外场作用下聚合物滞后生热效应

为了研究振动参数对聚合物黏弹性能及塑化成型过程的影响,深入分析了振动场的作用机理,揭示了相位角与滞后生热率之间的关系,得出了振动场作用下聚合物塑化成型速率表达式,最后通过聚对苯二甲酸乙二醇酯(PET)动态毛细管挤出以及多维振动塑化成型设备进行实例计算和实验研究,实验结果和理论计算值符合得很好,并得出结论: PET塑化速率随振动频率的增加呈先增加后减小的趋势,当激振频率趋向于材料固有频率时(振动频率约为15 Hz时),PET塑化速率达到最大值,当振幅为6 MPa时,其值约为22 g/min,为相同振幅下,频 关键词： 振动场 滞后生热 相位角 低温成型     

Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming

A phase change memory （PCM） device, based on the Ge2Sb2Te5 （GST） material, is fabricated using the standard 0.18-μm CMOS technology. After serials of detailed experiments on the phase transition behaviors, we find that the RESET process is strongly dependent on the state of the inactive area and the active area affects the SET process dramatically. By applying a 5-mA current-voltage （I — V） sweep as initial operation, we can reduce the voltage drop beyond the active area during the RESET process and the overall RESET voltage decreases from 3 V plus to 2.5 V. For the SET operation, a non-cumulative programming method is introduced to eliminate the impact of randomly formed amorphous active area, which is strongly related to the threshold switching process and SET voltage. Combining the two methods, the endurance performance of the PCM device has been remarkably improved beyond 1 × 106 cycles.