Important role of molecular permanent dipoles of the Alq3/Al interface studied from first-principles

We have studied the atomic geometries and electronic properties of the tris-(8-hydroxyquinoline) aluminum (Alq₃)/Al interface using density functional calculations. The calculated interface dipoles agree reasonably well with the experiments and the origin of the interface dipole formation mainly comes from the alignment of the permanent dipoles of Alq₃ molecules. The HOMO levels of the Alq₃ molecules significantly depend on the orientation of the molecular permanent dipoles and the interfacial gap state observed by experiments is ascribed to the co-existence of the two orientations of the molecular dipoles.     

Method of the orthonormality-constrained variation

The orthonormality-constrained variation method is developed, the application of which gives an exact SCF equation. The variational procedure used in deriving the equation clarifies the source and meaning of two kinds of arbitrary parameters which appear by the use of the method of lagrangean multipliers.     

Origin of the stability of Ge(105) on si: a new structure model and surface strain relaxation

The structure of Ge(105)-(1 x 2) grown on Si(105) is examined by scanning tunneling microscopy (STM) and first-principles calculations. The morphology evolution with an increasing amount of Ge deposited documents the existence of a tensile surface strain in Si(105) and its relaxation with increasing coverage of Ge. A detailed analysis of high-resolution STM images and first-principles calculations produce a new stable model for the Ge(105)-(1 x 2) structure formed on the Si(105) surface that includes the existence of surface strain. It corrects the model developed from early observations of the facets of "hut" clusters grown on Si(001).     

双奇核188Au的准粒子带结构研究

利用在束γ谱学实验技术, 通过¹⁷³Yb(¹⁹F,4nγ)反应 布居了¹⁸⁸Au的高自旋态, 并对其准粒子带结构进行了研究. 基于实验测量结果, 对原有的双奇核¹⁸⁸Au能级纲图做了较大的修改. 通过系统性比较, 对15⁺以上的能级结构进行了讨论.     

Multiple Coulomb excitation of a 70Ge beam and the interpretation of the 02 + state as a deformed intruder

Electromagnetic properties of the low-lying states in a ⁷⁰Ge nucleus were studied through the multiple Coulomb excitation of a ⁷⁰Ge beam with a ^natPb target. Relative γ-ray intensities were measured as a function of emission angle relative to the scattered projectile. Sixteen E2 matrix elements, including diagonal ones, for 6 low-lying states have been determined using the least-squares search code GOSIA. The expectation values 〈Q ²〉 of 0₁ ⁺ and 0₂ ⁺ states in ⁷⁰Ge are compared with those in ^{72, 74, 76}Ge. Simple mixing calculations indicate that the 0₂ ⁺ states in ⁷⁰Ge and ⁷²Se can be treated as deformed intruder states. It is shown that the deformed intruder becomes the ground state in ⁷⁴Kr. These interpretations of the 0₂ ⁺ states in this region are compared with the potential-energy surface calculations by the Nilsson-Strutinsky model, which allow to interpret the experimental results in a qualitative way from the theoretical point of view. Received: 2 September 2002 / Accepted: 5 November 2002 / Published online: 25 February 2003 RID="a" ID="a"e-mail: sugawara@pf.it-chiba.ac.jp Communicated by D. Schwalm     

双奇核172Re高自旋态转动带结构实验研究

利用重离子熔合蒸发反应¹⁴⁹Sm(²⁷Al,4nγ)¹⁷²Re布居了形变双奇核¹⁷²Re的高自旋态,用12套带有BGO反康普顿抑制的高纯锗探测器阵列进行了在束γ实验测量,首次建立了形变双奇核¹⁷²Re由3个转动带构成的高自旋态能级纲图.研究和讨论了3个转动带的结构特征,基于已有的高自旋态核结构知识并通过系统学比较和分析指出它们的准粒子组态分别为πh_11/2⊙νi_13/2,πh_9/2⊙νi_13/2和π1/2^－[541]⊙ν1/2^－[521].发现前两个转动带在自旋小于18.5h时其转动能级呈现反常的旋称劈裂.