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We report experimental realization of a quantum version of Maxwell's demon using solid state spins where the information acquiring and feedback operations by the demon are achieved through conditional quantum gates.A unique feature of this implementation is that the demon can start in a quantum superposition state or in an entangled state with an ancilla observer. Through quantum state tomography, we measure the entropy in the system, demon, and the ancilla, showing the influence of coherence and entanglement on the result. A quantum implementation of Maxwell's demon adds more controllability to this paradoxical thermal machine and may find applications in quantum thermodynamics involving microscopic systems. 相似文献
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By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots (QDs) with the configuration of positively charged excitons X+ (one electron, two holes). The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction. 相似文献
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正A:Experimental Setup We use a home-built confocal microscopy with an oil immersed objective lens to address and detect single nitrogen vacancy(NV)centers in a single-crystal diamond sample,which is mounted on a doughnut shape,three-axis,closed-loop piezoelectric actuator 相似文献
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Learning the Hamiltonian of a quantum system is indispensable for prediction of the system dynamics and realization of high fidelity quantum gates.However,it is a significant challenge to efficiently characterize the Hamiltonian which has a Hilbert space dimension exponentially growing with the system size.Here,we develop and implement an adaptive method to learn the effective Hamiltonian of an 11-qubit quantum system consisting of one electron spin and ten nuclear spins associated with a single nitrogen-vacancy center in a diamond.We validate the estimated Hamiltonian by designing universal quantum gates based on the learnt Hamiltonian and implementing these gates in the experiment.Our experimental result demonstrates a well-characterized 11-qubit quantum spin register with the ability to test quantum algorithms,and shows our Hamiltonian learning method as a useful tool for characterizing the Hamiltonian of the nodes in a quantum network with solid-state spin qubits. 相似文献
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We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 8OK, the second-order correlation function at zero time delay, g^(2)(0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature. 相似文献
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Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In0.17Ga0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III--V compound semiconductor optoelectronic devices on Ge substrates. 相似文献
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