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Chueshova A. G. Pavlova L. A. Peshcherova S. M. Nepomnyashchikh A. I. 《Crystallography Reports》2021,66(7):1206-1215
Crystallography Reports - The orientation of grains and the special boundaries formed by them in multicrystalline silicon has been studied by electron backscattered diffraction. It is found that... 相似文献
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L. A. Pavlova A. I. Nepomnyashchikh S. M. Peshcherova 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2011,5(5):949-953
Multisilicon crystals grown from refined metallurgical silicon are studied by scanning electron microscopy (SEM) and electron
probe microanalysis (EPMA). The varieties of intergranular boundaries are revealed. Impurities are found to be contained in
inclusions in multisilicon. The intergranular boundaries contain no impurities, and they do not concentrate the elements present
in multisilicon. It is proved experimentally that, in the homogeneous areas of the crystal the lifetime of minor charge carriers
is maximum, whereas its minimum value corresponds to the areas with numerous intergranular boundaries. 相似文献
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S. M. Peshcherova L. A. Pavlova A. I. Nepomnyashchikh Yu. D. Scherbakov S. S. Kolesnikov 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2014,8(1):127-130
The grain structure of multisilicon crystals are investigated by scanning electron microscopy and electron backscatter diffraction. It is found that the contrast of an image obtained by scanning polished multisilicon surfaces in the mode of backscattered electrons by electron-probe microanalysis is caused by the fact that the contrasting grains on the test site of the surface belong to different crystallographic orientations. It is revealed that high-angle grain boundaries are areas where the contrast varies, whereas small-angle boundaries are not observed on the polished surfaces. Consequently, the degree of contrast of the image obtained in this scan mode can be used to qualitatively assess the degree of misorientation of neighboring grains. 相似文献
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