首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   19篇
  免费   0篇
化学   15篇
晶体学   4篇
  2014年   1篇
  2013年   1篇
  2012年   1篇
  2011年   2篇
  2010年   8篇
  2009年   3篇
  2008年   2篇
  2006年   1篇
排序方式: 共有19条查询结果,搜索用时 78 毫秒
1.
Mono- and diesters of N-benzoylaminoacetic acid, which exhibit high wear-preventive properties in a synthetic ester oil, were synthesized.  相似文献   
2.
Synthesis of norbornenyl methyl esters of a number of haloacetic acids via [4+2] cycloaddition of cyclopentadiene to allyl esters of these acids was examined. The yield and isomer composition of the synthesized compounds were examined in relation to the reaction conditions, and the best conditions for their preparation were found.  相似文献   
3.
The possibility of preparing 1,4,5,6-tetrachloro-7,7-dimethoxybicyclo[2.2.1]hepta-2,5-dienyl-methyl esters of p-substituted benzoic acids by [4+2]cycloaddition of tetrachlorodimethoxycyclo-pentadine to propargyl esters of the corresponding acids was examined. The optimal synthesis conditions were found. The structure of the compounds synthesized was confirmed by independent synthesis and by IR and 1H NMR spectroscopy.  相似文献   
4.
[4 + 2]-Cycloaddition of hexachlorocyclopentadiene to para-substituted prop-2-yn-1-yl benzoates gave the corresponding 1,4,5,6,7,7-hexachlorobicyclo[2.2.1]hepta-2,5-dien-2-ylmethyl benzoates. The structure of the adducts was confirmed by independent synthesis, esterification of para-substituted benzoic acids with 1,4,5,6,7,7-hexachlorobicyclo[2.2.1]hepta-2,5-dien-2-ylmethanol.  相似文献   
5.
6.

The problem regarding the distribution of aluminum and indium impurities in bulk crystals of solid solutions with a variable composition Ge1−x Si x (0 ≤ x ≤ 0.3) is solved in order to establish regularities of the changes in the segregation coefficients of impurities with variations in the composition of the host lattice in the germanium-silicon system. Aluminum-and indium-doped crystals of Ge1−x Si x (0 ≤ x ≤ 0.3) solid solutions with a silicon content decreasing along the crystallization axis are grown by a modified Bridgman method with the use of a silicon seed. The concentration distribution of impurities over the length of the crystals is determined from Hall measurements. It is demonstrated that the experimental data on the concentration distribution of impurities in the crystals are in good agreement with the results obtained from the theory according to which the equilibrium segregation coefficients of impurities vary linearly with a change in the composition of Ge-Si solid solution crystals.

  相似文献   
7.
Hexachlorobicyclo[2.2.1]hepta-2,5-dienylmethyl haloacetates were prepared by [4+2]-cycloaddition of hexachlorocyclopentadiene to the corresponding propargyl haloacetates.  相似文献   
8.
New 2-aminomethyloxy derivatives of 1-(propylsulfanyl)pentane were prepared by condensation of 1-(propylsulfanyl)pentan-2-ol with formaldehyde and secondary amines. The starting 1-(propylsulfanyl)pentan-2–ol was synthesized by the reaction of 1–propanethiol with 1–bromopentan–2–ol. The structures of the products were proved by elemental analysis, IR and 1H NMR spectroscopy, and mass spectrometry. The compounds were tested as antimicrobial additives to lubricating oils and as antiseptics against bacteria and fungi.  相似文献   
9.
Synthesis of new methyleneoxyamine derivatives of 1-(propylthio)octane by condensation of 1-(propylthio)octane with secondary amines and formaldehyde was carried out. Structure of the synthesized compounds was proved by elemental analysis, IR, 1H NMR, and mass spectra. Compounds were tested as antimicrobial additives to lubricating oils. They were found to suppress effectively the activity of microorganisms.  相似文献   
10.
It is shown by Hall measurements that quenching complexly doped Ge1 − x Si x 〈Cu, Al〉 (0 ≤ x ≤ 0.20) crystals from 1050–1080 K leads to the formation of additional electroactive acceptor centers in them. The activation energy of these centers increases linearly with an increase in the silicon content in the crystal and is described by the relation E k x = (52 + 320x) meV. Annealing these crystals at 550–570 K removes the additional acceptor levels. It is established that the most likely model for the additional electroactive centers is a pair composed of substituent copper and aluminum atoms (Cu s Al s ) or interstitial copper and substituent aluminum atoms (Cu i Al s ). It is shown that the generation of additional deep acceptor levels must be taken into account when using the method of precise doping of Ge1 − x Si x 〈Al〉 crystals with copper.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号