Glass formation in the system Al(IO<Subscript>3</Subscript>)<Subscript>3</Subscript>-HIO<Subscript>3</Subscript>-H<Subscript>2</Subscript>O

Glass-formation features in the system Al(IO₃)₃-HIO₃-H₂O are discussed, and the boundaries of the glass field are determined.     

Cyclometallated 1,2,3-triazol-5-ylidene iridium(III) complexes: synthesis,structure, and photoluminescence properties

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Glass formation in the LiCl-H<Subscript>2</Subscript>O system

The causes of the great extent of the glass formation range in the LiCl-H₂O system were discussed in the frame of studying glass formation in aqueous electrolyte systems. Suggested causes of such an extent of the glass formation range are, first, the nature of the interaction of components in the system and, second, the specifics of the interaction of the lithium ion with water.     

Glass formation in the Al2(SO4)3-AlCl3-H2O system

Glass formation boundaries in the Al₂(SO₄)₃-AlCl₃-H₂O system were determined. The glass-formation abilities and crystallization resistance of samples were studied. A glass formation mechanism was suggested. Comparative analysis of the glass-formation abilities of samples of the Al₂(SO₄)₃-Al(NO₃)₃-H₂O and Al₂(SO₄)₃-AlCl₃-H₂O systems was carried out.     

Research on orotron oscillator with dispersive open resonant system

Theoretical and experimental results of an investigation into a new resonant system have been obtained. This system is named the sphere-corner-echelette open resonator (SCEOR) due to the employment of a mirror that was formed by two echelettes at the angles of 45° to the resonator axis. It turns ont that this resonator is excited on the specific modes not unique to others oscillating systems. There are presented the results of the experimental research of the orotron oscillator with the SCEOR. The spectrum of this device contains only the fundamental modes such as theT E M ₀₀₆,T E M ₀₀₇,T E M ₀₀₈. The efficiency of the orotron is improved, when all other factors are the same the orotron with a much used sphere-cylindrical open resonator.     

New type of eigenoscillations and total-transmission resonance through an iris with below-cutoff hole in a rectangular waveguide

The total-transmission phenomenon of the main mode of a rectangular waveguide through a below-cutoff hole in the waveguide shorting before the point of occurrence of the higher-order waveguide modes is found. The effect is due to generation of high-Q eigenoscillations at the evanescent E₁₁ mode and is originated from a specific oscillation formed near a step junction of two waveguides, namely a larger single-mode waveguide and a smaller below-cutoff one. The iris composed of such two junctions is longitudinally symmetric. Thus, a pair of resonances occurs in accordance with the existence of a pair of symmetric and antisymmetric field distributions at the iris. Analogy with the recently found effects in double-periodic gratings with small holes is revealed. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 51, No. 2, pp. 111–121, February 2008.     

Multifunctional Sulfur-Hyperdoped Silicon Nanoparticles with Engineered Mid-Infrared Sulfur-Impurity and Free-Carrier Absorption

Si nanoparticles (NPs), which are innovative promising light-harvesting components of thin-film solar cells and key-enabling biocompatible theranostic elements of infrared-laser and radiofrequency hyperthermia-based therapies of cancer cells in tumors and metastases, are significantly advanced in their near/mid-infrared band-to-band and free-carrier absorption via donor sulfur-hyperdoping during high-throughput facile femtosecond-laser ablative production in liquid carbon disulfide. High-resolution transmission electron microscopy and Raman microscopy reveal their mixed nanocrystalline/amorphous structure, enabling the extraordinary sulfur content of a few atomic percents and very minor surface oxidation/carbonization characterized by energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy. A 200-nm thick layer of the nanoparticles exhibits near−mid-infrared absorbance, comparable to that of the initial 380-micron thick n-doped Si wafer (phosphor-dopant concentration ≈10¹⁵ cm⁻³), with the corresponding extinction coefficient for the hyperdoped NPs being 4–7 orders higher over the broadband spectral range of 1–25 micrometers. Such ultimate, but potentially tunable mid-IR structured, multi-band absorption of various sulfur-impurity clusters and smooth free-carrier absorption are break through advances in mid-infrared (mid-IR) laser and radiofrequency (RF) hyperthermia-based therapies, as envisioned in the RF-heating tests, and in fabrication of higher-efficiency thin-film and bulk photovoltaic devices with ultra-broad (UV−mid-IR) spectral response.