Mid-IR Cathodoluminescence of Fe:ZnSe

Optics and Spectroscopy - The dependences of the integral intensity and kinetics of mid-IR cathodoluminescence (CL) of Fe:ZnSe crystals on an iron concentration varying from 0.01 to 14 wt % are...     

Temperature dependence of the lasing efficiency of the three-micrometer YAG:Er laser

Experimental results and calculated data on the study of the temperature dependence of the lasing efficiency of the pulsed three-micrometer YAG:Er³⁺ laser in the range T = ?80 ? +80°C are presented. It was shown that a decrease in the laser crystal temperature from room temperature to T = ?80°C leads to an increase in the laser output energy by a factor of 3?4 at the same energy of lamp pumping. Accordingly, the differential lasing efficiency increases (about three times).     

Influence of the gamma-ray fraction in the reactor radiation on the total signal of a self-powered neutron detector

For controlling the linear power density in the reactor core, the Khortitsa-M software program as a part of the in-core instrumentation system (ICIS) employs only self-powered neutron detector (SPND) data with the neutronic calculation for the consistent determination of the power density in unmeasurable fuel assemblies (FAs). The confidence of the interpretation of the SPND data essentially determines the safe and efficient operation of a reactor. Previously, it was assumed that the gamma-ray fraction in the reactor radiation does not exceed one percent and is independent of the fuel enrichment and the FA and SPND burnups. Since it is difficult to estimate the contribution of the reactor gamma radiation to the SPND current experimentally, in this work, we present a calculated estimate using modern software and libraries of constants. On the basis of the results of this study, the question is discussed whether it is appropriate to take into account the reactor gamma radiation in the transfer function from the SPND current to the power density of six fuel elements surrounding the SPND with allowance for both the type of FA and the FA and SPND burnups.     

Surface electron-beam induced voltage study of the characteristics of Si Pt: Si photodetector matrices

The characteristics of individual pixels in Si Pt: Si matrices were studied by the surface electron-beam induced voltage method. The potential of this method for the nondestructive testing of large-scale (several micrometers in size) recombination-active defects in the working regions of matrix elements was demonstrated.     

The Influence of Annealing in Zinc Vapor on the Visible and Mid-IR Luminescence of ZnSe:Fe2+

Optics and Spectroscopy - The influence of annealing in zinc vapor on the impurity-defect composition and the IR cathodoluminescence (CL) of ZnSe:Te plates diffusion-doped with iron is studied....     

Thermal conditions of the Er:YAG laser under stationary diode pumping

Experimental results and calculation data for the thermal conditions of the YAG:Er laser active element shaped as a flat plate under pumping by continuous radiation of a diode array (λ = 980 nm) with fiber output are presented. The thermal field and temperature in the plate optical excitation channel are measured using the thermal imaging technique. Their dependence on the pump power is studied. A comparison of calculated and experimental data allowed the determination of the heat transfer coefficient from the YAG:Er crystal to air under conditions of natural convection.     

Two-photon confocal microscopy in the study of the volume characteristics of semiconductors

Zn–Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.     

Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials

By the example of ZnSe crystals, the capabilities of two-photon confocal microscopy as a tool for obtaining “planar” maps of nonequilibrium charge-carrier lifetimes in semiconductor materials and for investigating other direct-gap semiconductors and semiconductor heterostructures are considered. It is shown that such maps with a depth step and an in-plane resolution of several microns can be obtained for distances from the surface up to 1 mm. This technique is used to visualize inhomogeneities in the crystals under study and to examine their structure and luminescence characteristics.     

Influence of Annealing in Zinc Vapor on the Microstructure and Activator Radiation of ZnSe : Fe

Crystallography Reports - The effect of thermal treatment in zinc vapor on the stoichiometry, defect and impurity structure, and activator cathodoluminescence of ZnSe doped with iron by the thermal...